Allicdata Part #: | NP70N10KUF-E1-AY-ND |
Manufacturer Part#: |
NP70N10KUF-E1-AY |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET N-CH 100V 70A TO-263 |
More Detail: | N-Channel 100V 70A (Tc) 1.8W (Ta), 120W (Tc) Surfa... |
DataSheet: | NP70N10KUF-E1-AY Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3.3V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 |
Mounting Type: | Surface Mount |
Operating Temperature: | 175°C (TJ) |
Power Dissipation (Max): | 1.8W (Ta), 120W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3750pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 75nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 35A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 70A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Last Time Buy |
Packaging: | Tape & Reel (TR) |
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The NP70N10KUF-E1-AY is a N-Channel enhancement mode MOSFET of the power MOS VII family. It is designed for demanding turn-on and fast switching applications where enhanced switching performance is required. This MOSFET exhibits lower average on-resistance than the power MOSFET family and is housed in a low footprint package. The NP70N10KUF-E1-AY is suitable for applications such as high frequency power supplies, DC/DC converters, UPS systems, server power supplies and home appliances.
The NP70N10KUF-E1-AY is designed to operate in the enhancement mode. In this mode, the maximum output current is limited by the drain-source resistance, or RDS(ON). The RDS(ON) is determined by the MOSFET’s threshold voltage, gate voltage, temperature, and the gate-to-drain capacitance. The drain-source on-resistance of the NP70N10KUF-E1-AY increases as the gate voltage increases. This is known as ‘RDS roll-off’. As the gate voltage is increased, the on-resistance of the MOSFET decreases until it reaches a minimum value. The RDS roll-off is necessary to limit the maximum output current, which would otherwise be too high and could potentially cause damage to the MOSFET.
The NP70N10KUF-E1-AY is capable of fast switching times, which is important for efficient operation and is also offered in a very compact package. Its efficient design, low on-resistance, and fast switching times make it ideal for use as a high frequency power switch in a wide range of applications. It is also suitable for switching demanding loads such as motors, lighting, and solar energy conversion and storage systems. In addition, it can be used in power amplifiers, power supplies, and DC/DC converters.
The NP70N10KUF-E1-AY is easy to use and extremely reliable. Its low footprint package and low RDS(ON) make it an ideal solution for space-constrained applications. Its small size, fast switching behavior and low on-resistance make it the perfect choice for demanding power switching applications. The NP70N10KUF-E1-AY is capable of handling up to 10A drain current and can be used in ambient temperatures up to 125C.
In summary, the NP70N10KUF-E1-AY is a reliable, high speed, low-on resistance N-channel enhancement mode MOSFET. Its small size and low RDS(ON) make it ideal for use in a wide range of fast switching, power switching applications. It is capable of handling up to 10A drain current and can be used in ambient temperatures up to 125C. It is a great choice for demanding applications such as motors, lighting, and solar energy conversion and storage systems.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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NP70N10KUF-E1-AY | Renesas Elec... | 0.0 $ | 1000 | MOSFET N-CH 100V 70A TO-2... |
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