NP74N04YUG-E1-AY Discrete Semiconductor Products |
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| Allicdata Part #: | NP74N04YUG-E1-AYTR-ND |
| Manufacturer Part#: |
NP74N04YUG-E1-AY |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Renesas Electronics America |
| Short Description: | MOSFET N-CH 40V 75A 8HSON |
| More Detail: | N-Channel 40V 75A (Tc) 1W (Ta), 120W (Tc) Surface ... |
| DataSheet: |  NP74N04YUG-E1-AY Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | 8-SMD, Flat Lead Exposed Pad |
| Supplier Device Package: | 8-HSON |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 175°C (TJ) |
| Power Dissipation (Max): | 1W (Ta), 120W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5430pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 96nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 5.5 mOhm @ 37.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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NP74N04YUG-E1-AY is a family of Very High-Speed Power MOSFETs (VHSPDMOS) that is designed for high frequency, high power applications. This device offers low on-state resistance, low capacitance, low drive voltage, and low gate charge. It is suitable for a variety of applications, such as high frequency switching, high power DC/DC converters, high speed switching, and motor control.
The device has an insulated metal substrate (IMS) with a high power technology design, which allows it to handle high current spikes and deliver high frequency capability over a wide range of temperatures. This device is available in a TO-263 package and contains a small amount of gold to enhance its performance. It offers low input capacitance and low on-resistance switching losses, which make it ideal for high-performance power designs.
The NP74N04YUG-E1-AY has a single semiconductor layer of n-type oxide MOSFETs, which use a field-effect transistor (FET) for switching devices. This means that the device does not use any mechanical contacts, like most other transistors, in order to be turned on or off. Instead, the gate of the FET acts as a conduit for a current that allows or restricts current flow through the device. The higher the voltage applied to the gate, the more current flows, allowing for the device to be triggered. Conversely, the lower the voltage applied to the gate, the less current flows, allowing for the device to be deactivated.
The device is quite versatile and can be used in a variety of applications, such as in DC/DC converters that require a high-frequency response or motor control applications. The high speed operation of this device also makes it an ideal choice for high power switching, such as in power converters or in high power motor control applications. Additional benefits include low gate-charge and good ESD protection, which make it suitable for a wide range of power systems.
The NP74N04YUG-E1-AY is a reliable single MOSFET that is designed for high power, high frequency applications. This device offers low on-state resistance, low capacitance, low gate charge, and low drive voltage, making it ideal for a wide range of applications. The device uses a field-effect transistor (FET) for switching, which allows for a more consistent control over current flow than traditional switching techniques. This makes the device suitable for applications such as high frequency switching, high speed switching, high power DC/DC converters, and motor control.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| NP74N04YUG-E1-AY | Renesas Elec... | -- | 1000 | MOSFET N-CH 40V 75A 8HSON... |
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