Allicdata Part #: | NP89N04PUK-E1-AY-ND |
Manufacturer Part#: |
NP89N04PUK-E1-AY |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET N-CH 40V 90A TO-220 |
More Detail: | N-Channel 40V 90A (Tc) 1.8W (Ta), 147W (Tc) Surfac... |
DataSheet: | NP89N04PUK-E1-AY Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 |
Mounting Type: | Surface Mount |
Operating Temperature: | 175°C (TJ) |
Power Dissipation (Max): | 1.8W (Ta), 147W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5850pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 102nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2.95 mOhm @ 45A, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 90A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The NP89N04PUK-E1-AY is a single channel N-MOSFET designed for use in a wide range of applications. It offers a low drain to source on-state resistance, low gate charge and a low operating temperature range. The NP89N04PUK-E1-AY is specifically designed for high-frequency, high-temperature and high voltage applications.
N-MOSFETs are widely used in electronic circuits, especially in power management and protection circuits. They offer a variety of features which make them suitable for various applications. They provide fast switching, high efficiency and low power dissipation.
The NP89N04PUK-E1-AY is a single N-MOSFET with an on-state resistance of 40mΩ at 1A and a maximum gate threshold voltage of 2.85V. It is available in a number of package types such as SOP-8, SOIC-8 and DPAK. It has a wide operating temperature range of -40°C to +150°C, making it suitable for a variety of high temperature applications.
The working principle of an N-MOSFET is based on the modulation of the drain-to-source voltage by the gate voltage. When a positive voltage is applied to the gate terminal of the device, it will create an electric field between the source end and the drain end. This field will reduce the resistance between the two terminals. This reduces the voltage across the drain-to-source terminals, which in turn allows current to flow.
When the voltage across the gate and source is reduced, the electric field is reversed and the resistance between the two terminals increase. This reduces the current flow and switches the device off. The NP89N04PUK-E1-AY can be used in a range of applications due to its features such as low Rds on-state resistance, high input impedance and low gate charge.
The NP89N04PUK-E1-AY can be used in industrial, automotive and consumer electronic applications, as well as in power management and protection circuits. It can also be used in DC to DC converters, motor control circuits and solenoid control circuits. Its features make it ideal for high-temperature applications such as power amplifiers, buck and boost converters, high-frequency rectifiers and digital circuits.
The NP89N04PUK-E1-AY is an excellent choice for applications requiring high performance and reliability. Its wide operating temperature range and low drain to source on-state resistance make it suitable for a variety of applications. It is available in a range of package types, allowing for easy implementation in any system. Overall, the NP89N04PUK-E1-AY is an excellent choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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