NSS20101JT1G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	1A
Voltage - Collector Emitter Breakdown (Max):	20V
Vce Saturation (Max) @ Ib, Ic:	220mV @ 100mA, 1A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 100mA, 2V
Power - Max:	300mW
Frequency - Transition:	350MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-89, SOT-490
Supplier Device Package:	SC-89-3
Base Part Number:	NSS20101

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Introduction

The NSS20101JT1G is a single bipolar junction transistor (BJT) that is designed to solve the engineering and technical challenges in a range of applications. It is an excellent choice for general purpose and analog signal switching applications that require low power consumption and low noise. This transistor can be used in both digital and analog circuits.

Package

The NSS20101JT1G is a surface mount TO-92 package that is small in size and easy to use. It has a maximum power rating of 625 mW, with a maximum collector-emitter voltage rating of 200 Volts and a peak collector current rating of 1.5 Amps.

Application

The NSS20101JT1G can be used for a range of applications, including:

• Power switching
• High-frequency audio amplifiers
• Analog signal switching
• Low-noise digital logic

This device can also be used in any circuit that requires a high-performance bipolar transistor with low noise and power consumption.

Working Principle

The NSS20101JT1G is a bipolar transistor that operates in a three-terminal configuration. It has an emitter, a collector, and a base. The device works by allowing current to pass from its collector to its emitter when a positive voltage is applied to its base.When a positive voltage is applied to the base of the NSS20101JT1G, current within the base-emitter junction is increased, and the device enters the forward active region of operation. This increases current flow through both the base and the collector, thus allowing current to pass from the collector to the emitter.The NSS20101JT1G can be operated in the reverse active mode, by applying a negative voltage to the base. This causes current to flow from the emitter to the collector.Additionally, the NSS20101JT1G is designed with a low reverse-current rating. This limits the amount of current that can flow from the collector to the emitter when the device is in the reverse active region of operation.

Conclusion

The NSS20101JT1G is a single bipolar junction transistor (BJT) that is designed to solve the engineering and technical challenges in a range of applications. It has a low power requirement, low noise, and excellent performance characteristics. This device can be used for data switching, audio amplifiers, low-noise digital logic and other applications. Additionally, it is available in a convenient surface-mount TO-92 package. The NSS20101JT1G works by allowing current to flow from its collector to its emitter when a positive voltage is applied to its base, and also by allowing current to flow from its emitter to its collector when a negative voltage is applied to its base.

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