Allicdata Part #: | NSS20200LT1GOSTR-ND |
Manufacturer Part#: |
NSS20200LT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 20V 2A SOT-23 |
More Detail: | Bipolar (BJT) Transistor PNP 20V 2A 100MHz 460mW S... |
DataSheet: | NSS20200LT1G Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Vce Saturation (Max) @ Ib, Ic: | 180mV @ 200mA, 2A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 250 @ 500mA, 2V |
Power - Max: | 460mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Base Part Number: | NSS20200 |
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The NSS20200LT1G Bipolar Junction Transistor (BJT) is widely used in applications such as analog and digital circuits, linear and switching mode power supplies, high-frequency and high-power amplifiers, and motor control. This single device offers several advantages including low voltage and high switching speeds. It is available in a variety of packages including SOIC, SMT, SOT23, and SOT-323.
A bipolar transistor is formed when two types of semiconductor material (n-type and p-type) are combined to form three regions, or layers, within the transistor. The three regions are the base, collector, and emitter respectively. A single BJT can be used in a variety of configurations depending on the input and output signals. For example, when the base is forward biased the current produced in the collector region is larger than the current that entered the base region, this is known as a common-emitter configuration.
The NSS20200LT1G device is a monolithic single BJT that provides high-speed switching and reduced on-resistance. It has wide operating temperature range between -55°C up to 175°C, with a breakdown voltage of 200V. The device supports a high maximum DC collector current of 1A, with a maximum total power dissipation of 80mW.
The NSS20200LT1G device offers fast switching speed and low Gate-Source capacitance. This makes it ideal for high-speed switching applications that require low power consumption. The low Gate-Source capacitance also enables the device to drive logic signals over large distances with minimal signal degradation.
The NSS20200LT1G also offers a wide range of input voltage and output voltage options. This allows the device to be used in applications requiring voltage level shifting, or in low voltage, low current circuits. The device is also suitable for use in linear applications, as the high input impedance ensures minimal current draw from the input voltage source. Furthermore, the low output resistance of the device enables the device to drive low impedance loads, aiding in the control of motor speed.
In summary, the NSS20200LT1G device is a versatile, single BJT that is ideal for a wide range of applications. Its fast switching speed, low Gate-Source capacitance, and wide voltage range enable the device to be used in a variety of digital, analog, and linear circuits. Furthermore, the low output impedance of the device ensures minimal current draw from the input and output voltages, making it suitable for use in low current circuits and motor controls.
The specific data is subject to PDF, and the above content is for reference
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