NSS20200W6T1G Allicdata Electronics

NSS20200W6T1G Discrete Semiconductor Products

Allicdata Part #:

NSS20200W6T1GOSTR-ND

Manufacturer Part#:

NSS20200W6T1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 20V 2A SC-88
More Detail: Bipolar (BJT) Transistor PNP 20V 2A 100MHz 555mW S...
DataSheet: NSS20200W6T1G datasheetNSS20200W6T1G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 215mV @ 20mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Power - Max: 555mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363
Base Part Number: NSS20200
Description

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Bipolar Junction Transistors (BJT\'s) are characterized as single, double and multiple. In the context of single BJT\'s, the NSS20200W6T1G (hereinafter referred to as NSS20200) is a widely used type of BJT. It is a general purpose PNP bipolar junction transistor, intended for use in a wide range of applications in low voltage and low power electronic equipment.

The NSS20200 consists of three layers of semiconductor materials- a P type base, a N type emitter, and a N type collector. The three layers are separated by a thin oxide layer. It has a wide range of theoretical and practical applications in its field.

The most common application of the NSS20200 is in amplifying low level input signals. It can be used in transistor-transistor logic (TTL) circuits, and is also widely used in switching circuits, since it has a low ON resistance. The NSS20200 can also be used in audio amplifiers, motor control circuits, voltage regulators and oscillators, making it a versatile and reliable component for many electronic applications.

On the other hand, the working principle of the NSS20200 BJT is relatively simple. When forward biasing the P type base-emitter junction, current flow is enabled to the collector-emitter junction.The base-emitter voltage (VBE) is typically between 0.7-0.8V for the NSS20200.

Since a small base current is needed to switch the transistor ON and OFF, the amount of current amplification or gain ( usually expressed as the current gain, hFE or β) is very high. This means that a relatively small signal can control a larger current. The value of hFE for the NSS20200 is typically between 500-1000, depending on the collector current and the base-emitter voltage.

The NSS20200 also has a high breakdown voltage, meaning it can handle a large reverse bias voltage before current can flow naturally through it. This also helps to increase the BJT\'s reliability, by allowing it to have a large operating voltage range.

The NSS20200 is also a fairly reliable BJT, as it can handle a wide range of temperatures, current and voltages. In particular, it can operate over a temperature range of -55°C to +150°C, making it suitable for a wide variety of electronic applications.

Overall, the NSS20200 is a widely used and highly reliable type of single BJT. Its versatility makes it suitable for many different applications, ranging from low level amplifying to motor control circuits and logic circuits. Its high gain and breakdown voltage are also advantageous and contribute to its reliability.

The specific data is subject to PDF, and the above content is for reference

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