NSS20300MR6T1G Discrete Semiconductor Products |
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Allicdata Part #: | NSS20300MR6T1GOSTR-ND |
Manufacturer Part#: |
NSS20300MR6T1G |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 20V 3A TSOP-6 |
More Detail: | Bipolar (BJT) Transistor PNP 20V 3A 100MHz 545mW S... |
DataSheet: | NSS20300MR6T1G Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.09681 |
6000 +: | $ 0.09095 |
15000 +: | $ 0.08508 |
30000 +: | $ 0.07823 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Vce Saturation (Max) @ Ib, Ic: | 320mV @ 20mA, 2A |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1.5A, 2V |
Power - Max: | 545mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-23-6 |
Supplier Device Package: | 6-TSOP |
Base Part Number: | NSS20300 |
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NSS20300MR6T1G is a single atypical bipolar transistor that is manufactured by ON Semiconductor. This NPN transistor is widely used in many electronics projects where a reliable power switch is required. The NSS20300MR6T1G has an operating temperature range of -55°C to 125°C making it ideal for robust and high temperatures applications.
The PN junction of the NSS20300MR6T1G heats up when a small current (rather than a large one) is applied to it. The heat generated by the junction builds up on the base of the transistor causing the potential barrier between the collector and emitter regions to break down. This is known as thermal depletion, or the avalanche breakdown. Once the base-emitter barrier is broken down, electrons can travel through the transistor, thus allowing current to flow from the collector to the emitter.
Depending on the current flowing through the device, NSS20300MR6T1G has two basic configurations. When the current is greater than 0.7mA this transistor acts as a switch called an amplified transistor. When the current is less than 0.7mA, then it\'s known as a low-power device – this is known as the dissipative configuration.
The NSS20300MR6T1G is an ideal power switch for many applications such as motor control, power supply and lighting equipment, due to its robust nature. The current gain between the collector and emitter is also very wide, being around 100 to 300, making it very suitable for applications which require a certain level of power control. It can also be used as a low-power device in applications such as small oscillators. Another advantage of this device is that it can be used as an amplifier, by adding additional transistors to the existing circuit, thus allowing it to amplify the signal.
Since the NSS20300MR6T1G is a single transistor, it doesn’t require two transistors in order to work. As a result, its design is simplified. This makes it easier to install and remove the device, as well as reducing the risk of short circuits due to improper or incorrect installation. The dimensions of the NSS20300MR6T1G are also fairly small, making it ideal for use in small projects where a very tight space is available.
The NSS20300MR6T1G is a highly reliable and robust power switch. Its ability to withstand high and low temperatures makes it suitable for a wide range of applications, providing an efficient and reliable power switch. With its small size, low power requirement and wide range of applications, the NSS20300MR6T1G is the perfect solution for your project needs.
The specific data is subject to PDF, and the above content is for reference
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