Allicdata Part #: | NSS20600CF8T1G-ND |
Manufacturer Part#: |
NSS20600CF8T1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 20V 6A 8-CHIPFET |
More Detail: | Bipolar (BJT) Transistor PNP 20V 6A 100MHz 830mW S... |
DataSheet: | NSS20600CF8T1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 6A |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Vce Saturation (Max) @ Ib, Ic: | 200mV @ 400mA, 4A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 220 @ 1A, 2V |
Power - Max: | 830mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SMD, Flat Lead |
Supplier Device Package: | ChipFET™ |
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When it comes to transistors, a single type stands among the most popular and enduring. The NSS20600CF8T1G bipolar junction transistor is an essential component in many circuit designs today. This versatile device is capable of providing amplification, switching, or signal modifications. In order to understand the applications and working principles of this transistor, it is important to delve into the features and design considerations of the device. The NSS20600CF8T1G is designed for general-purpose switching and amplification applications. It is classified as an NPN bipolar junction transistor (BJT). This device can operate at switching speeds from 1 kHz up to 1 GHz, with a high voltage capability of up to 500V. The transistor also has an operating temperature range of -55° to +150°C. As with all transistors, the NSS20600CF8T1G has three main terminals, labeled as the base (B), the collector (C) and the emitter (E) respectively. In an NPN transistor, the collector and the emitter are negatively biased, and the base is positively biased. This means that when a positive voltage (Vbe) is applied to the base, current flows from the emitter to the collector. This current is known as Collector-Emitter current (Ic) and it can be used to switch other components on or off. The amplification characteristics of the NSS20600CF8T1G are excellent as well. Typical parameters include collector current (Ic) of up to 1.0 Amp, collector voltage (Vce) of up to 500V, and maximum power dissipation of up to 7W. This device also provides excellent current gain (hFE) range from 60 to 120. In addition to the basic parameters and performance of the NSS20600CF8T1G, there are several design considerations to keep in mind. The base-emitter voltage (Vbe) is an important parameter that must be kept under control. Also, it is important to note that the device is sensitive to thermal runaway, so proper heat sink management is essential. Moreover, proper mounting and grounding techniques should be employed in order to ensure optimal performance. Given the features and performance of the NSS20600CF8T1G, it is easy to see why this device is an important component in circuit designs today. It is well-suited for use in switching and amplifier circuits, and can provide excellent performance in a wide range of applications. Its impressive specifications and design considerations make it an ideal choice for designers who seek a reliable and cost-effective solution for switching and amplifying signals. >
The specific data is subject to PDF, and the above content is for reference
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