NST30010MXV6T1G Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	2 PNP (Dual) Matched Pair
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	30V
Vce Saturation (Max) @ Ib, Ic:	600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):	15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	420 @ 2mA, 5V
Power - Max:	500mW
Frequency - Transition:	100MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-563, SOT-666
Supplier Device Package:	SOT-563
Base Part Number:	NST30010M

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The NST30010MXV6T1G is a type of Transistor – Bipolar (BJT) – Arrays, specifically – an advanced multiple discrete bipolar transistor array suitable for high-speed switching applications. The advantages of using this type of transistor array are that it has increased frequency response; Allows for expanded fan-out capability; and its hermetically sealed TO-3 metal case has greater thermal stability.

Applications

This transistor array has some great applications in the areas of Automotive, Low Voltage, High Speed Switching, Audio-signal amplification, DC to AC Conversion, as well as other basic switching applications. Automotive applications include things like ignition systems, alternator control, throttle control, fuel control and instrumentation. In terms of Low Voltage High Speed Switching, this transistor arrays can be used in communications equipment, pulse transformers, RS232 and other data communications applications, as well as power supplies and converters. This product is also popular for DC to AC Conversion applications such as UPS systems, battery backups, etc.

Working Principle

NST30010MXV6T1G is a multiple discrete bipolar transistor array that uses field-effect transistors (FETs) to control current flow. This device is effective in transmitting and controlling the current between the collectors, emitters and base of the transistor array. The device works by using the electric field generated by the FET to control the current flow by controlling the potential difference between the circuits each FET is connected to. The device is also able to provide protection against overvoltage and overcurrent. The device also offers Enhanced Thermal Stability over Standard Bipolar Arrays, with a hermetically sealed TO-3 metal case, which can handle temperatures ranging from 40°C to 175°C. This makes it great for applications that require high-precision switching and temperature control, such as in automotive and communications applications.

Conclusion

The NST30010MXV6T1G is a great type of Transistor – Bipolar (BJT) – Arrays for high speed switching applications and well suited for automotive, low voltage high speed switching, audio-signal amplification and DC to AC conversion applications. It offers excellent thermal stability over standard bipolar arrays with a hermetically sealed TO-3 metal case that can handle temperatures ranging from 40°C to 175°C. It is a great solution for applications that require high-precision switching and temperature control.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description