NST3946DXV6T1

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN, PNP
Current - Collector (Ic) (Max):	200mA
Voltage - Collector Emitter Breakdown (Max):	40V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max):	--
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 10mA, 1V
Power - Max:	500mW
Frequency - Transition:	300MHz, 250MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-563, SOT-666
Supplier Device Package:	SOT-563
Base Part Number:	NST3946D

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NST3946DXV6T1 Application Field and Working Principle

NST3946DXV6T1 is a member of a family of innovative Bipolar Junction Transistor Arrays (BJTAs) developed by semiconductor company Fairchild Semiconductors. Its main application is for purposes like general-purpose switching and amplification in a variety of industrial, consumer and automotive applications. This device is designed to provide improved performance, high-efficiency, and reduced size. In addition, it offers protection from over-voltage and over-current conditions.

Junction Field Transistor (JFET)

NST3946DXV6T1 is an example of what is known as a Junction Field Transistor (JFET) device. A JFET is a semiconductor device that has three terminals, an emitter and two source/drain electrodes. It is formed by joining two p-type and n-type semiconductor materials. The JFET changes its resistance depending on the voltage applied to one of its electrodes. The function of the gate of the JFET is to control the amount of current flowing between the two source/drain electrodes.

Bipolar Junction Transistor (BJT)

NST3946DXV6T1 also uses a Bipolar Junction Transistor (BJT) to form a multi-pole BJT array. A BJT consists of three regions; an emitter, base and collector. It works by using the input signal to control the flow of current between the emitter and collector regions. Current flows through the device in an avalanche type of manner, with the current through the device determined by the voltage difference between the emitter and collector.

BJT Array

As mentioned earlier, the NST3946DXV6T1 is a multi-pole BJT array. This device is designed to provide improved switching performance and a high degree of isolation between its poles. The array consists of a total of six transistor circuits arranged in three separate sections. Each of the sections has two transistors, connected in a common base configuration. These devices are designed to provide an insulated output switch with a minimum on-state leakage current and a low-level turn-on voltage. The BJT array can be used for applications like low-level switching, level shifting, audio switching, automotive transceivers and other high-power needs.

Applications

NST3946DXV6T1 is mainly used for general-purpose switching and amplification in a variety of industrial, consumer and automotive applications. It is used in automotive transceivers, audio switching, level shifting, and other high-power needs. This BJT array is also well-suited in applications where high performance, low-level switching, and high-voltage insulation are required.

Working Principle

When the voltage applied to the NST3946DXV6T1 is increased, the JFET portion of the device begins to conduct. When the current passes through the device, the transistors in the BJT array are then activated, causing current to flow into the respective output terminals. This current is then used by the application that is being used by the device. The NST3946DXV6T1 is a reliable, high-efficiency device that offers improved performance and reduced sizing compared to traditional switching and amplification components. It is well-suited for applications where high performance, low-level switching and high-voltage insulation are required. Its array of six transistors allows for increased accuracy, faster switching, and increased efficiency when compared to other transistors.

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