NST3904DP6T5G Discrete Semiconductor Products

The NST3904DP6T5G is a high voltage, high current array transistor designed and created by ON Semiconductor. It is designed as a cost-effective alternative to high power devices such as power field-effect transistors (FETs) and insulated gate bipolar transistors (IGBTs). The NST3904DP6T5G includes six dies each containing 3904 diodes, which are connected together to provide up to 600 V and 40 A of continuous current. This makes it suitable for a wide range of applications, such as in motor control, AC and DC motor drives, energy harvesting, and power factor correction.

The NST3904DP6T5G is classified as an array bipolar junction transistor (BJT), which is a discrete electronic device consisting of three or more interconnected BJTs. Arrays, like the NST3904DP6T5G, are able to increase the current and voltage ratings of an individual BJT, allowing it to be utilized in more power-demanding applications. Furthermore, arrays can also reduce the circuit complexity of a power device, as they integrate multiple individual BJTs into a single package.

An individual BJT is made up of three layers: an emitter layer, a base layer, and a collector layer. This is known as the three-layer structure of a BJT. An array BJT consists of multiple of these three-layer structures, connected in either a series or parallel circuit. Depending on the configuration, an array BJT can increase the current ratings or voltage ratings of an individual BJT. The NST3904DP6T5G is configured in an array of six dies, each consisting of 3904 diodes.

In terms of working principle, the NST3904DP6T5G functions similarly to an individual BJT. An electric current will flow through the emitter and base layers when a voltage is applied to the base. This electric current will be amplified across the transistor, with the amplified current flow controlled by the base current. This amplified current is then directed to the collector through the collector-emitter junction. As the NST3904DP6T5G is an array transistor, multiple instances of this process occur, allowing it to provide higher currents and voltages than an individual BJT.

The NST3904DP6T5G array transistor is suitable for a wide range of applications, making it an ideal choice for power systems that require high voltage and current ratings. Thanks to its relatively low cost, the device is an ideal cost-effective solution for many applications. Furthermore, its integrated current and voltage monitoring features make it easy to use and further increase its versatility.