
NST3906DP6T5G Discrete Semiconductor Products |
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Allicdata Part #: | NST3906DP6T5GOSTR-ND |
Manufacturer Part#: |
NST3906DP6T5G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS 2PNP 40V 0.2A SOT-963 |
More Detail: | Bipolar (BJT) Transistor Array 2 PNP (Dual) 40V 20... |
DataSheet: | ![]() |
Quantity: | 8000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 PNP (Dual) |
Current - Collector (Ic) (Max): | 200mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 10mA, 1V |
Power - Max: | 350mW |
Frequency - Transition: | 250MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-963 |
Supplier Device Package: | SOT-963 |
Base Part Number: | NST3906D |
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The NST3906DP6T5G is a part of the bipolar junction transistors (BJT) array family, belonging to the group of transistors used in applications requiring high-speed switching. This BJT array is comprised of each nine PNP transistors connected in parallel featuring a shared very low voltage drop of only 0.3V. This array has an individual gain of 400, a maximum peak current rate of 1A, and a maximum peak power dissipation of 1250mW. Additionally, its minimum collector current rating is at 40mA. The NST3906DP6T5G is also packaged in a DIP-6 format (Dual-Inline Package), and is offered for electronic applications with an operating temperature range of –65°C to 150°C. The array is a type of three-layer semiconductor device, composed of two p-type semiconductor layers sandwiching a n-type layer located in between. This BJT configuration has three terminals, namely the emitter, base, and collector. The invention of the BJT relies on the separate flow of electrons and holes in the three regions – emitter, base, and the collector. Whether the BJT is used as a switch or an amplifier, this element is widely applied in digital and analog circuits. The way a BJT array works is through the interlinking of transistors (in this case, nine) being said to be connected “in parallel” to avoid interference between them. This interlinking is done by connecting the nine collectors simultaneously via a single collector pin terminal. Therefore, when not activated by a voltage, the path remains closed and the array is off. When a voltage is sent via the base pin to activate the array, the path is opened and current then flows from the collector terminal to the emitter terminal, thus signaling that the production process is initiated.NST3906DP6T5G has become a popular choice for different applications, ranging from automotive, industrial, and consumer electronics. In particular, this BJT array is often used for motor control, amplifiers, power transistors, motor drive, clamping circuit, audio, and push-pull SMPS. This array has also become the standard in stepper motor use due to its impressive switching speed, allowing the circuit to be turned off or on quickly.The NST3906DP6T5G array is a strong contender in the electronics industry as it has been widely used in a variety of applications and can handle large-power transistors, extremely high-speed switching, or small-signal applications. Further, it features a very low on-state voltage drop at only 0.3V, which is ideal for increased power efficiency. It can be used in harsh electrical environments and temperatures up to 150 degrees Celsius. All these factors make it one of the most versatile transistor array available for use in a number of different applications.
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