
NST3904DXV6T5G Discrete Semiconductor Products |
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Allicdata Part #: | NST3904DXV6T5GOSTR-ND |
Manufacturer Part#: |
NST3904DXV6T5G |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS 2NPN 40V 0.2A SOT563 |
More Detail: | Bipolar (BJT) Transistor Array 2 NPN (Dual) 40V 20... |
DataSheet: | ![]() |
Quantity: | 8000 |
8000 +: | $ 0.04382 |
16000 +: | $ 0.03895 |
24000 +: | $ 0.03651 |
56000 +: | $ 0.03246 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 NPN (Dual) |
Current - Collector (Ic) (Max): | 200mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 10mA, 1V |
Power - Max: | 500mW |
Frequency - Transition: | 300MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | SOT-563 |
Base Part Number: | NST3904D |
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The NST3904DXV6T5G has many applications and works on a variety of conditions. It is a type of transistor technology known as bipolar junction transistor (BJT) arrays. This form of technology has become a popular choice among many professional engineers and designers. This article will explore the NST3904DXV6T5G application field and working principle.
The BJT array operates in many different environments, from home appliances to automative and industrial settings. These transistors feature low-voltage operation and a quality construction. The NST3904DXV6T5G array includes six individually-encapsulated transistors in a single, integrated package. Each transistor operates separately and can be controlled individually, allowing for increased flexibility in applications. The NST3904DXV6T5G is most often used in voltage regulator circuits and protection systems.
When it comes to the device\'s working principle, BJT arrays rely on what is known as the bipolar junction transistor (BJT). It works on the principle of the three-layer junction between a collector, base, and emitter. A base-emitter junction will form when the two connected components become forward-biased. The current will then form and flow between these two contacts. Then, the base-collector junction will become reverse-biased and the remaining current will have to flow through it.
When current flows from the emitter to the collector, the base-collector junction is forward-biased, which allows the NST3904DXV6T5G array to act as a switch. When combined with other components, the transistors can be used to regulate power, turn devices on and off, or control other circuits. The NST3904DXV6T5G transistors can also be used in power switching networks. The transistors can be controlled through control signals, letting the user customize their operation.
The NST3904DXV6T5G transistors are designed to handle a variety of situations. They are designed to allow for both low-voltage and high-current operation. This makes these transistors perfect for many different applications and makes them a great choice for engineers and designers to incorporate into their projects. The transistors are also designed to be reliable, durable, and able to withstand high operating temperature. This makes them a great choice for many applications.
Overall, the NST3904DXV6T5G transistors have countless applications in a variety of settings. They are capable of handling low-voltage operation and can be used in many different circuits. The BJT arrays are a popular choice for engineers and designers and the application fields and working principles of the NST3904DXV6T5G transistors make them an excellent choice. The transistors can provide reliable and durable operation, making them a great choice for many applications.
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