![NTA4151PT1 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | NTA4151PT1-ND |
Manufacturer Part#: |
NTA4151PT1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 20V 0.76A SOT-416 |
More Detail: | P-Channel 20V 760mA (Tj) 301mW (Tj) Surface Mount ... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 450mV @ 250µA |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | SC-75, SOT-416 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 301mW (Tj) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 156pF @ 5V |
Vgs (Max): | ±6V |
Gate Charge (Qg) (Max) @ Vgs: | 2.1nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 360 mOhm @ 350mA, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 760mA (Tj) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The NTA4151PT1 is a normally-open N channel Enhancement Mode Power MOSFET. It is ideal for applications where high efficiency, low heat, and low voltage are required. The NTA4151PT1 is built with proprietary High Gate Stressing Cell Technology and combines high performance with low static and dynamic power losses. The NTA4151PT1 is rated for a breakdown voltage of -20 V, a drain current of -2.2mA, and a P-channel threshold of -12V (VGS).The NTA4151PT1 offers two different applications fields; motor control, and signal control. In motor control, the NTA4151PT1 is used as a power switch in many applications, including separate power supplies, LED drivers, and control circuitries. Its low gate charge, fast switching, and low Rds(on) make it an ideal choice for controlling high-power motors or voltages.In signal control, the NTA4151PT1 is used for analog and digital signal switch. Its low gate charge, fast switching, and low Rds(on) make it an ideal choice for signal conditioning and analog signal (A/D) conversions. This can be particularly beneficial in medical applications, where low power loss is advantageous in maintaining patient safety.The working principle of the NTA4151PT1 is based on its internal structure. Two layers of lightly doped n-type silicon (NdSi) form the substrate, while an array of p-type MOSFETs form the gate. When a positive voltage is applied to the gate, the n-type substrate forms a “channel” that electrons can move through. This is known as the “channel mode”, and is the basis for the NTA4151PT1’s efficient power switching and low Rds(on).The NTA4151PT1 also features a built-in protection circuit, as well as an over-voltage clamping circuit. The protection circuit is designed to protect the MOSFET from damage due to over-voltage and over-current, providing superior reliability compared to other MOSFETs. The over-voltage clamping circuit ensures that the voltage that can pass through the device does not exceed a predetermined limit. This is helpful in applications where spikes in voltage can occur, since it helps reduce system damage and increases system reliability.Overall, the NTA4151PT1 is an excellent choice for applications requiring efficient power and signal switching, as well as low heat dissipation. Its ability to withstand high voltages and high gate charge makes it an ideal choice for a variety of applications. Furthermore, its small size and low cost make it a great value for large-scale applications such as motor control and signal conditioning.
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