![NTA7002NT1 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | NTA7002NT1-ND |
Manufacturer Part#: |
NTA7002NT1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 0.154A SOT-416 |
More Detail: | N-Channel 30V 154mA (Tj) 300mW (Tj) Surface Mount ... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1.5V @ 100µA |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | SC-75, SOT-416 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 300mW (Tj) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 20pF @ 5V |
Vgs (Max): | ±10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 7 Ohm @ 154mA, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 154mA (Tj) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The NTA7002NT1 is a vertical power MOSFET developed by NewTech Industries designed to meet different requirements in semiconductor technology. It is a high-performance device suitable for applications such as current limiting, frequency control, voltage regulation, power switching, and power regulation. It is used for high voltage, low to medium power applications.
The NTA7002NT1 is constructed of two sections: the drain and the source. The drain is a heavily doped region with a large area of heavily doped Silicon that serves as the connection for the electrons to the gate. The source is a much lesser doped area with a much smaller size of Silicon that serves as the connection for the electrons to the gate. The gates in MOSFETs are electrically isolated from the drain and the source. The electrical connection between the drain and the source is provided by the gate.
The NTA7002NT1 MOSFET is operated in an enhancement-mode, wherein the gate source voltage must be increased for the device to start conduction. An increase in the drain voltage, or a decrease in the gate-source voltage will cause the device to shut-off. As a result, the device is used to control current through the device by modulating the gate-source voltage. The NTA7002NT1 typically operates in the range of -2V to 10V. The maximum drain to source voltage (VDS) is 500V while the maximum drain current (Ib) is 4A.
The NTA7002NT1 has a power dissipation of 9W and a thermal resistance of 6.9 K/W. It is a unipolar device and is typically used as a switch. Due to its low current threshold voltage, it is suitable for applications where low-level switching is desired. The NTA7002NT1 is designed to provide fast operation, low on resistance and low gate charge. It is also suitable for applications that require low thermal voltage drift.
The NTA7002NT1 can be used for a variety of applications such as in motor control, power supplies, high-current switching, power management, and power distribution. It is also suitable for use in communication systems, portable devices and consumer electronics. The NTA7002NT1 is capable of driving large loads with low loss and high efficiency. It can also be used for high-speed applications due to its fast switching speed and tight loop control.
By understanding the working principle of the NTA7002NT1, engineers can use the device in various applications and take into account the characteristics of the device and the environment in which the device is used. The NTA7002NT1 has been designed to provide a high level of reliability, efficiency and power that make it suitable for a range of applications, making it a great choice for engineers who require a versatile and reliable MOSFET.
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Part Number | Manufacturer | Price | Quantity | Description |
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NTA7002NT1 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 30V 0.154A SO... |
NTA7002NT1G | ON Semicondu... | -- | 45 | MOSFET N-CH 30V 0.154A SO... |
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