| Allicdata Part #: | NTAT6H406NT4G-ND |
| Manufacturer Part#: |
NTAT6H406NT4G |
| Price: | $ 1.25 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | NCH 80V 175A 2.9MOHM |
| More Detail: | N-Channel 80V 175A (Ta) 90W (Tc) Surface Mount ATP... |
| DataSheet: |  NTAT6H406NT4G Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 1.12451 |
| Series: | -- |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 80V |
| Current - Continuous Drain (Id) @ 25°C: | 175A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 2.9 mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 8040pF @ 40V |
| FET Feature: | -- |
| Power Dissipation (Max): | 90W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | ATPAK |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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NTAT6H406NT4G is a type of MOSFET (Metal Oxide Semiconductor Field Effect Transistor). This device is very popular in many applications due to its simple, highly reliable and low-cost construction. It is used in many different industries and has multiple uses ranging from audio amplifiers, to power inverters, to high-power switching circuits.
The NTAT6H406NT4G has a simple structure, consisting of a source, drain, and gate terminal. The gate terminal is connected to the source terminal, and the drain terminal is connected to the substrate. The source and drain terminals are separated by an oxide layer, which is an insulator. This layer is responsible for the electrical characteristics of the MOSFET, such as the voltage across the terminal and the current through the terminals.
The NTAT6H406NT4G is a dual N-channel MOSFET, which means it can be used in either a single-ended or differential configuration. This device is ideal for switching applications, as it is capable of operating at frequencies from 1 MHz to 5.5 GHz. It has a maximum drain current of 110 A and a continuously drain-source voltage of 700 V. Additionally, the device has a maximum power dissipation of 1.6 W and a maximum on-state resistance of 5.6 mΩ.
The working principle of the NTAT6H406NT4G is based on the MOSFET structure. When a voltage is applied to the gate terminal, it creates an electric field which attracts electrons from the source towards the drain terminal. This forms an electric current between the source and drain, thus allowing the device to act as a switch. The electric field created by the gate terminal also allows the gate terminal to control the flow of current through the MOSFET.
The application field of NTAT6H406NT4G is mainly in high seep switching applications. It can be used for controlling high power loads, such as audio amplifiers, inverters, and power supplies. It is also widely used in the automotive industry for controlling electric motors, solenoids, and fuel pumps. Additionally, it is used in consumer electronics, medical imaging systems, and telecommunication systems.
The NTAT6H406NT4G is a highly reliable device which is used in a wide range of applications. Its simple structure and excellent performance makes it suitable for many different applications. This device is a great choice for those who need a reliable, low-cost solution for their switching applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| NTAT6H406NT4G | ON Semicondu... | 1.25 $ | 1000 | NCH 80V 175A 2.9MOHMN-Cha... |
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