| Allicdata Part #: | NTBS2D7N06M7-ND |
| Manufacturer Part#: |
NTBS2D7N06M7 |
| Price: | $ 1.76 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | NMOS D2PAK 60V 2.7 MOHM |
| More Detail: | N-Channel 60V 110A (Tc) 176W (Tj) Surface Mount D²... |
| DataSheet: |  NTBS2D7N06M7 Datasheet/PDF |
| Quantity: | 1000 |
| 800 +: | $ 1.58937 |
| FET Feature: | -- |
| Power Dissipation (Max): | 176W (Tj) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | D²PAK (TO-263) |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Series: | -- |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 60V |
| Current - Continuous Drain (Id) @ 25°C: | 110A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 2.7 mOhm @ 80A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 6655pF @ 30V |
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The NTBS2D7N06M7 is an N-channel depletion metal-oxide-semiconductor field-effect transistor (MOSFET) from ON Semiconductor. It is a single transistor type used for specialized applications such as audio amplifiers, motor drive, and networking systems. This article will discuss the application field and working principle for the NTBS2D7N06M7.
Application Field
The NTBS2D7N06M7 is used mainly for audio amplifier applications where it can produce a higher power gain than a traditional BJT or complement transistor. It has a very low gates threshold voltage and can deliver high bandwith performance. It is also useful in motor drive applications where it can provide improved control over the motor\'s speed and torque. Additionally, this transistor is often used in retransmission systems, switching regulators, and switching power supplies for stable operation.
Working Principle
The NTBS2D7N06M7 operates on the principle of the MOSFET. It consists of an N-type semiconductor channel sandwiched between two P-type source and drain contacts. Applying a gate voltage across the source and drain terminals creates an electric field which induces a current between the source and drain. The amount of current is determined by the voltage applied to the gate, allowing the device to control the flow of current. This makes the NTBS2D7N06M7 an extremely reliable transistor for controlling the switching of currents.
The NTBS2D7N06M7 has a low static drainage-source on-state resistance of just 0.0014 Ohms with an operating voltage range of -20 to +60V. It also has a maximum drain current of 40V. These features make it ideal for applications requiring high switching current over a wide range of voltages.
Conclusion
The NTBS2D7N06M7 is an N-channel depletion MOSFET from ON Semiconductor which is used for specialized applications such as audio amplifiers, motor drive, and networking systems. It operates on the principle of the MOSFET and has a low static drainage-source on-state resistance and a wide operating voltage range. This makes it an excellent choice for controlling the switching of currents in applications requiring high switching current and a wide range of voltages.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| NTBS2D7N06M7 | ON Semicondu... | 1.76 $ | 1000 | NMOS D2PAK 60V 2.7 MOHMN-... |
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