NTD95N02R Allicdata Electronics
Allicdata Part #:

NTD95N02R-ND

Manufacturer Part#:

NTD95N02R

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 24V 12A DPAK
More Detail: N-Channel 24V 12A (Ta), 32A (Tc) 1.25W (Ta), 86W (...
DataSheet: NTD95N02R datasheetNTD95N02R Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta), 86W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 32A (Tc)
Drain to Source Voltage (Vdss): 24V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The NTD95N02R, also known as trench MOSFET, is a type of metal-oxide-semiconductor field-effect transistor (MOSFET). It is a single-transistor type transistor, meaning that it has one P-type and one N-channel. In contrast, symmetrical types have two identical gates. The NTD95N02R is typically used in direct current (DC) applications where power switching is required.

MOSFETs, or metal-oxide semiconductor field-effect transistors, are versatile and efficient transistors used in a variety of electrical and electronic systems and devices. As with other field-effect transistors, the NTD95N02R operates as an amplifier, current amplifier and voltage regulator. The voltage polarized body of the transistor allows it to switch rapidly.

The primary application field of the NTD95N02R is power switching. This can be in the form of motor control, electrolysis, power supplies, and other high-power applications where a relatively low on resistance and fast switching times are needed. It is often used in power circuits, especially in switching power supplies, electronic motor controllers, industrial and consumer motor applications, and motorized toys.

The working principle of MOSFETs is based on the principles of metal-oxide semiconductor (MOS) technology. This technology consists of metal-oxide layers deposited on a wafer of silicon. The metal-oxide layer, or gate oxide, acts as an insulation barrier between the metal contacts and the substrate. The application of an electrical field to the gate oxide causes current flow between the source and the drain, resulting in effective switching.

The NTD95N02R MOSFET is an excellent solution for power circuits in high-power applications. It has excellent switching speed, low on-resistance, and good EMI and noise immunity. The device is robust, reliable and cost effective, making it a great choice for switching applications. The combination of power switching speed, low resistance, and excellent EMI and thermal characteristics make the NTD95N02R a great choice for use in many industrial and consumer applications where high power switching is required.

The specific data is subject to PDF, and the above content is for reference

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