NTHS4111PT1G Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	3.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	45 mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id:	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	28nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1500pF @ 24V
FET Feature:	--
Power Dissipation (Max):	700mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	ChipFET™
Package / Case:	8-SMD, Flat Lead

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NTHS4111PT1G is a recently introduced FET device for automotive applications. The device is a dual P-channel MOSFET with a low on-resistance rating of 1.9 ohm and a low gate threshold voltage of -1.8V. It is designed to offer superior performance in both EMI/RFI immunity and ESD protection. NTHS4111PT1G is a surface-mount FET that enables efficient delivery of power to automotive systems. It is suitable for applications such as automotive power-management, active EMI filtering, and ESD protection.The NTHS4111PT1G is a high-performance, low-voltage MOSFET that is specifically designed for automotive and industrial applications with stringent power requirements. It features an ESD protection voltage rating of 10V and a wide range of operating temperatures from -55 to 125 °C. It also provides a low dropout voltage and a high voltage carry-through current of up to 5A. This makes the NTHS4111PT1G extremely versatile in many power delivery and system protection applications.The NTHS4111PT1G’s working principle relies on the basic science of MOSFETs. The three pins on the device are the source, gate and drain. When a voltage is applied to the gate, it creates a channel between the source and the drain, which allows current flow. The size of the channel is controlled by the voltage, which is known as the gate voltage. The higher the voltage, the larger the channel and the more current that can flow.MOSFETs are often used in power management systems, as they can control the amount of power being sent to various components. By regulating the gate voltage, the MOSFET can control how much current is able to pass through the channel from the source to the drain. The NTHS4111PT1G features a notably low gate threshold voltage, allowing for efficient regulation of the current flow.ESD protection is another key application for the NTHS4111PT1G. The device is designed to withstand high levels of electrostatic discharge, up to 10V. This is critical in controlling EMI and RFI noise interference in automotive systems. The NTHS4111PT1G is a highly reliable and robust solution for EMI/RFI immunity and ESD protection.In addition to automotive and industrial applications, the NTHS4111PT1G is also suitable for use in the consumer IoT (Internet of Things) market. It can be used to drive power to sensors, IoT devices and other connected gadgets, providing reliable power delivery and protection.The NTHS4111PT1G is a highly specialized device for power-management and system protection. It combines a low voltage rating and low on-resistance with high levels of EMI/RFI immunity and ESD protection. It is suitable for a range of automotive and industrial applications, as well as consumer connected devices. Its working principle relies on the basic science of MOSFETs, using a voltage-controlled channel between the source and drain to regulate the current flow.

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