Allicdata Part #: | NTHS5402T1OS-ND |
Manufacturer Part#: |
NTHS5402T1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 4.9A CHIPFET |
More Detail: | N-Channel 30V 4.9A (Ta) 1.3W (Ta) Surface Mount Ch... |
DataSheet: | NTHS5402T1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 4.9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 35 mOhm @ 4.9A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Vgs (Max): | ±20V |
FET Feature: | -- |
Power Dissipation (Max): | 1.3W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | ChipFET™ |
Package / Case: | 8-SMD, Flat Lead |
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NTHS5402T1 is a single discrete N-Channel logic level MOSFET transistor with output capability of up to 20A and a worst case RDS(ON) of 0.008 Ω. It is designed for fast switching applications, and is ideal for high-side switching applications requiring a logic level gate drive. This device is packaged in a transistor outline (TO-220) for surface-mount applications.
Application Fields
The NTHS5402T1 is a commonly used MOSFET in many distinct application fields including load switching, interfacing between low-current digital logic levels and high-current circuits, and power switching circuits. Within those domains, they come in handy in several applications such as DC motors and other actuators, stepper motor drivers, general purpose load switches, and high current power gates. The low on-resistance, fast switching speed, and low-voltage drive requirements of this MOSFET make it an excellent choice for use in space-constrained applications such as in mobile phone, smart cards, and notebooks.
Working Principle
MOSFETs operate on a principle whereby a voltage-controlled channel is activated between the source and drain terminals. The gate terminal, in turn, acts as a control for the rate of current flow, enabling the MOSFET to act as a controller for voltage and power. The NTHS5402T1 has an N-type channel, meaning a positive voltage must be applied to the gate in order for current to flow from the source to the drain. This MOSFET also has an additional gate-to-drain diode, which may present an issue in certain applications and must be taken into consideration when designing.
Advantages
The major advantage of the NTHS5402T1 MOSFET is that it can handle large currents with very low on-state resistance, allowing it to be used in power switching circuits. It is also very small and can therefore be used in space-constrained applications, as well as high-frequency switching applications. Furthermore, its low-voltage gate drive requirement makes it ideal for interfacing low-current digital stages with higher power outputs. Furthermore, it is highly reliable and can withstand high temperatures of up to 175 °C.
Conclusion
The NTHS5402T1 is a single discrete N-Channel logic level MOSFET transistor that is ideally suited for fast switching applications, such as high-side switching and load switching, as well as interfacing between low-current digital logic stages and higher current circuits. Its low on-state resistance, fast switching speed, and low-voltage drive requirements make it an excellent choice for space-constrained applications, such as in mobile phones, smart cards, and notebooks. As such, it should be considered when designing applications involving high-current power switches.
The specific data is subject to PDF, and the above content is for reference
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