NTHS5441PT1G Allicdata Electronics
Allicdata Part #:

NTHS5441PT1G-ND

Manufacturer Part#:

NTHS5441PT1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 20V 3.9A CHIPFET
More Detail: P-Channel 20V 3.9A (Ta) 1.3W (Ta) Surface Mount Ch...
DataSheet: NTHS5441PT1G datasheetNTHS5441PT1G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 46 mOhm @ 3.9A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 5V
FET Feature: --
Power Dissipation (Max): 1.3W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: ChipFET™
Package / Case: 8-SMD, Flat Lead
Description

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The NTHS5441PT1G is a single N-channel enhancement mode Field-Effect Transistor (FET) that is capable of providing fast switching and can be used to switch high levels of current accurately. This device is ideal for power supply applications like switching power converters and switch-mode regulators, as well as high-density applications like modems, set-top boxes, and consumer electronics.

The FETs are available in a 4-pin SOT-363 package for ease of implementation. It features maximum drain currents of 4A and a continuous drain current of 3A. The FETs have a low drain-source on-resistance of less than 0.09£gm, low gate threshold voltage, and fast switching speeds with a maximum turn-on delay time of 0.50ns and rise/fall times of 0.80/0.30ns. The FETs can withstand drain-source voltages up to 20V, gate-source voltages up to 10V, and can operate at temperatures ranging from -55°C to +150°C.

The core principle behind FETs is the dependence of the conductivity of the device on an applied voltage. This allows FETs to act as one-way valves or switches by controlling the flow of electrical current between its source and drain terminals. This is because a FET’s source and drain are separated by a semiconductor channel, and when a voltage is applied to the gate terminal, it can be used to control the current flowing through the channel.

From a practical standpoint, this makes FETs ideal for switching applications because they can be used to regulate the current flow to the load using a small amount of power from the gate. This is because FETs can control the on/off ratio of the current flowing from the source to the drain using only a small amount of gate power.

The NTHS5441PT1G offers several advantages such as high efficiency, low power consumption, and fast switching speeds. It is well-suited for applications such as switch-mode power supplies, battery management systems, and load switches. Additionally, the FETs can be used in low-noise amplifiers and switches to reduce electrical noise in sensitive applications.

The FET is also particularly useful in portable and handheld electronics, due to its low-power consumption, low-cost, and small physical size. It can be used in portable power supplies or battery-powered devices where efficiency and space-saving are important. In addition, the FETs can be combined with other components to create custom designs tailored to specific applications, such as adjustable speed motor drivers.

Overall, FETs are highly versatile and reliable devices for efficiently switching large amounts of power. The NTHS5441PT1G is a single N-channel enhancement mode FET that is ideal for high-current switching applications. It has a low on-resistance, fast switching speeds, and low power consumption, making it a good choice for power supply designs and portable electronics.

The specific data is subject to PDF, and the above content is for reference

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