NTLGD3502NT1G Discrete Semiconductor Products |
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Allicdata Part #: | NTLGD3502NT1GOSTR-ND |
Manufacturer Part#: |
NTLGD3502NT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 20V 4.3A/3.6A 6DFN |
More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 4.3A, 3.6A 1.7... |
DataSheet: | NTLGD3502NT1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Base Part Number: | NTLGD3502N |
Supplier Device Package: | 6-DFN (3x3) |
Package / Case: | 6-VDFN Exposed Pad |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 1.74W |
Input Capacitance (Ciss) (Max) @ Vds: | 480pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 4nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 60 mOhm @ 4.3A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4.3A, 3.6A |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Logic Level Gate |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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NTLGD3502NT1G (2A Lateral Double Diffused MOSFET) is a 4 pin N channel power MOSFET. It is available in TO-220AB, TO-252 and SOT-723 package options. It is commonly used in a wide range of applications such as high voltage switching, motor control, power supply, LCD displays, and language processing.
A MOSFET (metal–oxide–semiconductor field-effect transistor) is a type of transistor that utilizes an electric field to control the flow of current between a source and a destination. The N type MOSFET is one of the two main types. It uses the N-type material (in this case the NTLGD3502NT1G) as its source and gate material, allowing the device to conduct current between the two pins on the device. The MOSFETs allow for effective and efficient switching lengths into amplified electronic signals.
NTLGD3502NT1G is an example of an array containing multiple transistors. An array is an electronic configuration consisting of multiple transistors connected in various combinations and performing independent functions. In the case of the NTLGD3502NT1G, there are four transistors which are connected in series and perform a total of four independent functions. The first three transistors act as switches while the fourth transistor acts as a voltage regulator.
The working principle of the NTLGD3502NT1G is based on the Depletion Mode operation of MOSFETs. In this mode, the current flow between the source and the drain is controlled by the charge on the gate of the MOSFET. The Voltage at the Gate acts as a barrier between the source and the drain and is used to control the current flow. A higher voltage will increase the current flow, while a lower voltage will decrease the current flow.
The NTLGD3502NT1G is specially designed to be used in applications where high voltage switching and motor control is required. Its 4 pin configuration makes it suitable for applications such as power supply, LCD displays and language processing. It is also used in areas such as automotive, power electronics, audio and video, telecommunications, and general-purpose electronics.
In conclusion, the NTLGD3502NT1G is a 4 pin N channel power MOSFET from a larger array containing multiple transistors. Its working principle is based on the Depletion Mode operation of MOSFETs, which allows for efficient and effective switching of signals. It is widely used in applications such as high voltage switching, motor control, power supply, LCD displays, language processing, and other various electronic applications.
The specific data is subject to PDF, and the above content is for reference
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