Allicdata Part #: | NTLGF3402PT1G-ND |
Manufacturer Part#: |
NTLGF3402PT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 20V 2.3A 6-DFN |
More Detail: | P-Channel 20V 2.3A (Ta) 1.14W (Ta) Surface Mount 6... |
DataSheet: | NTLGF3402PT1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 6-VDFN Exposed Pad |
Supplier Device Package: | 6-DFN (3x3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.14W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 350pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 4.5V |
Series: | FETKY™ |
Rds On (Max) @ Id, Vgs: | 140 mOhm @ 2.7A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 2.3A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The NTLGF3402PT1G is a high-quality MOSFET designed for both analog and digital applications, and is typically used in a wide range of low voltage, high-power switching applications. It features a low on-state resistance, low capacitance and low leakage current characteristics. The device is an n-channel enhancement mode power transistor with high-frequency performance and low On-state resistance.
The NTLGF3402PT1G is an ideal choice for applications such as power supplies, motor control, DC/DC converters and switching applications. It has a low gate-to-source threshold voltage of 1.5 V, a maximum drain-sourcevoltage of 20 V and a maximum drain current of -12 A. This makes it suitable for use in battery-powered systems with MOSFETs that are switching high currents or higher voltages.
The application fields of the NTLGF3402PT1G MOSFET include automotive, telecommunications, consumer electronics, medical, industrial, and other applications requiring low voltage and high power switching. The device is widely used in power management solutions such as motor control systems, switched mode power supplies, din relays and pulse width modulation (PWM) systems.
The working principle of the NTLGF3402PT1G is based on the physical process of an insulated-gate field effect transistor (IGFET), which is a voltage-controlled semiconductor device. It is composed of a source, a drain and a gate. An electric field is created by applying a voltage between the source and gate, which causes the transistor to turn on. When the gate voltage is sufficiently high, the device is fully on, allowing current to flow from source to drain. As the voltage decreases, the device begins to turn off.
The device is capable of operating at very high frequencies, with speeds up to 500kHz, making it suitable for high-speed switching applications. The device also has a high current rating of -12 A, enabling it to handle larger loads than many other MOSFETs. It is available in both TO-220 and SOT-23 packages, making it suitable for both through-hole and surface-mount applications.
In conclusion, the NTLGF3402PT1G MOSFET is an excellent choice for applications requiring low voltage and high power switching. Its wide range of features and specifications, combined with the high speed and low on-state resistance make it a popular device for many applications.
The specific data is subject to PDF, and the above content is for reference
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