NTLGF3402PT2G Allicdata Electronics
Allicdata Part #:

NTLGF3402PT2G-ND

Manufacturer Part#:

NTLGF3402PT2G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 20V 2.3A 6-DFN
More Detail: P-Channel 20V 2.3A (Ta) 1.14W (Ta) Surface Mount 6...
DataSheet: NTLGF3402PT2G datasheetNTLGF3402PT2G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: 6-VDFN Exposed Pad
Supplier Device Package: 6-DFN (3x3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.14W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Series: FETKY™
Rds On (Max) @ Id, Vgs: 140 mOhm @ 2.7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The NTLGF3402PT2G is a single N-Channel MOSFET with a highly efficient P-Channel enhancement mode. It is a very modern device used in many different applications. It is a popular device for its relatively low on-state resistance and ability to accomplish an extremely high frequency operation with a wide range of gate-source voltages. It is an ideal device for applications such as switching regulators, load switches, high-frequency inverters, and DC-DC converters.

The NTLGF3402PT2G is a field-effect transistor, typically used in applications that require a high-performance switch or amplifier operating at high frequencies. This type of device is also referred to as a metal-oxide-semiconductor field-effect transistor (MOSFET). MOSFETs are voltage-controlled semiconductor components with two or three pins that are used to control the flow of current or electricity.

The NTLGF3402PT2G features a low on-state resistance and a comparatively high switching speed. The device is a state-of-the-art MOSFET technology in that it offers a wide range of gate-source voltages and an increase in the number of transistors that can be connected in series. The low gate-source threshold voltage and the low avalanche energy means that the NTLGF3402PT2G is capable of operating at high frequencies without any additional devices.

The working principle of a MOSFET is relatively simple. MOSFETs rely on the movement of charge carriers to create an electric field that controls the current flow in the device. When a positive voltage is applied to the gate terminal, it attracts electrons to the channel region, and a potential barrier is formed between the source and drain. This creates an effective resistance and restricts the current flow in the device. The current in a MOSFET is solely determined by the voltage applied to the gate terminal, which is commonly referred to as the “gate drive”.

The NTLGF3402PT2G is an incredibly popular device and can be found in wide variety of applications. It is most often used as a switch or amplifier in high-frequency circuits. It can be found in signal conditioning, RF power amplifiers, Class-D audio amplifiers, power converters, as well as in various lighting and motion control applications such as LED devices, door locks, and solenoid actuators. This device is also popular for its low insertion losses which make it ideal for use in power management applications.

In summary, the NTLGF3402PT2G is a highly efficient N-Channel MOSFET with a wide range of gate-source voltages and a low on-state resistance. It is an ideal device for a variety of applications such as switching regulators, load switches, high-frequency inverters, DC-DC converters, signal conditioning, and power management circuits. The working principle of the device is relatively simple and relies on the movement of charge carriers to create an electric field that controls the current in the device.

The specific data is subject to PDF, and the above content is for reference

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