NTLGD3502NT2G Allicdata Electronics
Allicdata Part #:

NTLGD3502NT2G-ND

Manufacturer Part#:

NTLGD3502NT2G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET 2N-CH 20V 4.3A/3.6A 6DFN
More Detail: Mosfet Array 2 N-Channel (Dual) 20V 4.3A, 3.6A 1.7...
DataSheet: NTLGD3502NT2G datasheetNTLGD3502NT2G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Base Part Number: NTLGD3502N
Supplier Device Package: 6-DFN (3x3)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.74W
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.3A, 3.6A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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NTLGD3502NT2G is a high voltage array NMOS device from Infineon Technologies. Manufactured with Infineon\'s surface channel process, it features a N-channel enhancement mode MOSFET. This product has a variety of different applications, such as integrated voltage level shifting in consumer and industrial appliances, DC-DC converters, appliance motor control, wide input range motor control, lighting control, and automotive motor control.

NTLGD3502NT2G is characterized by its high voltage performance, low on-resistance, low gate charge, and dedicated gate electrode. It has a maximum breakdown voltage of 220V and a maximum drain current of 8A. It has a total gate charge of 35nC and a low on-resistance of 0.22 Ohm. This makes it an ideal choice for a variety of applications, including lighting control, switching power supplies, and DC-DC converters.

The NTLGD3502NT2G has a dedicated gate electrode that allows for a wide voltage range and low turn-on loss. It can be operated over a voltage range from 8V to 220V. This makes it suitable for a wide variety of applications including lighting, automotive, HVAC, and general-purpose switching.

The NTLGD3502NT2G MOSFET array is also known for its dynamic-body diode protection. This feature enables the device to provide robust protection from overvoltage spikes and accidental reverse polarity. In addition, the NTLGD3502NT2G offers a variety of lead frame options to suit different application requirements.

The NTLGD3502NT2G has a typical working principle of operation. Firstly, when the gate voltage is less than the threshold voltage, the device is in the off-state, which means that no current flows through the channel. Secondly, when the gate voltage is higher than the threshold voltage, the device is in the on-state, which means that current can flow through the channel. This current is controlled by the gate voltage – the higher the voltage, the higher the current.

In summary, the NTLGD3502NT2G is a high voltage MOSFET array from Infineon Technologies and is suitable for a variety of applications. It features a high voltage performance, low on-resistance, low gate charge, and dynamic-body diode protection. It is also characterized by its low turn-on loss and wide voltage range, making it an ideal choice for lighting, automotive, HVAC, and general-purpose switching applications.

The specific data is subject to PDF, and the above content is for reference

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