Allicdata Part #: | NTLGD3502NT2G-ND |
Manufacturer Part#: |
NTLGD3502NT2G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 20V 4.3A/3.6A 6DFN |
More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 4.3A, 3.6A 1.7... |
DataSheet: | NTLGD3502NT2G Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Base Part Number: | NTLGD3502N |
Supplier Device Package: | 6-DFN (3x3) |
Package / Case: | 6-VDFN Exposed Pad |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 1.74W |
Input Capacitance (Ciss) (Max) @ Vds: | 480pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 4nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 60 mOhm @ 4.3A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4.3A, 3.6A |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Logic Level Gate |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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NTLGD3502NT2G is a high voltage array NMOS device from Infineon Technologies. Manufactured with Infineon\'s surface channel process, it features a N-channel enhancement mode MOSFET. This product has a variety of different applications, such as integrated voltage level shifting in consumer and industrial appliances, DC-DC converters, appliance motor control, wide input range motor control, lighting control, and automotive motor control.
NTLGD3502NT2G is characterized by its high voltage performance, low on-resistance, low gate charge, and dedicated gate electrode. It has a maximum breakdown voltage of 220V and a maximum drain current of 8A. It has a total gate charge of 35nC and a low on-resistance of 0.22 Ohm. This makes it an ideal choice for a variety of applications, including lighting control, switching power supplies, and DC-DC converters.
The NTLGD3502NT2G has a dedicated gate electrode that allows for a wide voltage range and low turn-on loss. It can be operated over a voltage range from 8V to 220V. This makes it suitable for a wide variety of applications including lighting, automotive, HVAC, and general-purpose switching.
The NTLGD3502NT2G MOSFET array is also known for its dynamic-body diode protection. This feature enables the device to provide robust protection from overvoltage spikes and accidental reverse polarity. In addition, the NTLGD3502NT2G offers a variety of lead frame options to suit different application requirements.
The NTLGD3502NT2G has a typical working principle of operation. Firstly, when the gate voltage is less than the threshold voltage, the device is in the off-state, which means that no current flows through the channel. Secondly, when the gate voltage is higher than the threshold voltage, the device is in the on-state, which means that current can flow through the channel. This current is controlled by the gate voltage – the higher the voltage, the higher the current.
In summary, the NTLGD3502NT2G is a high voltage MOSFET array from Infineon Technologies and is suitable for a variety of applications. It features a high voltage performance, low on-resistance, low gate charge, and dynamic-body diode protection. It is also characterized by its low turn-on loss and wide voltage range, making it an ideal choice for lighting, automotive, HVAC, and general-purpose switching applications.
The specific data is subject to PDF, and the above content is for reference
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