NTQD4154ZR2 Allicdata Electronics

NTQD4154ZR2 Discrete Semiconductor Products

Allicdata Part #:

NTQD4154ZR2OSTR-ND

Manufacturer Part#:

NTQD4154ZR2

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET 2N-CH 20V 7.5A 8-TSSOP
More Detail: Mosfet Array 2 N-Channel (Dual) 20V 7.5A 1.52W Sur...
DataSheet: NTQD4154ZR2 datasheetNTQD4154ZR2 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Base Part Number: NTQD4154Z
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.52W
Input Capacitance (Ciss) (Max) @ Vds: 1485pF @ 16V
Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 19 mOhm @ 7.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The NTQD4154ZR2 is a Square-Line array of N-channel enhancement mode Field Effect Transistors (FETs). Commonly used as low-power open drain voltage switching devices, particularly in digital circuitry, the NTQD4154ZR2 offers a high input-to-output ratio to provide superior switching performance and operational efficiency.

The NTQD4154ZR2 consists of four individual N-type FETs arranged in a 16-lead package. Each FET includes its own integrated gate, source, and drain capacitances. The FETs are wired in the same polarity, with the gate and source of each device connected in common. This enables the FETs to be operated in parallel to provide twice the current output of each individual FET.

The NTQD4154ZR2 is a low-voltage, low-power device capable of handling switching voltages up to 10V and equivalent to a single FET of 2mA. It can be used in multiple configurations and arrangements, such as two-way switches, multi-step switching and logic gating. The device is ideal for applications such as keyboard matrix or switch debouncing.

The operation of the NTQD4154ZR2 is based on an enhancement mode operation. This means that the FET is normally off, unless it is activated by a compatible voltage. The NTQD4154ZR2 is designed to manage both TTL and CMOS logic voltages, allowing it to be used in a variety of digital circuits.

Due to its low power requirements, the NTQD4154ZR2 can be used in battery powered applications. It has a maximum drain-source voltage of 10V and a maximum drain current of 2mA. It has a threshold voltage of 1.7V for the logic high level, and a threshold voltage of 0.4V for the logic low level. The maximum on-state resistance is typically 20 Ohms and is temperature compensated, allowing the use of temperature-sensitive components in the circuit.

In addition, the NTQD4154ZR2 is well suited for use in multiplexing circuits, allowing it to switch signals between levels with fewer components. The device also reduces crosstalk between adjacent channels by limiting the amount of coupling between them. The NTQD4154ZR2 is well insulated, preventing unwanted voltage problems and noise interference.

The performance of the NTQD4154ZR2 is enhanced with the use of Static Dissipation (SD) solder joint technology. This technology allows the device to operate reliably in environments up to 85 degrees Celsius, while still allowing maximum signal integrity.

Overall, the NTQD4154ZR2 is an ideal device for low-power switching applications, particularly in digital signal processing circuits. It is a low-cost, low-power device that offers excellent signal performance, reliability, and efficiency.

The specific data is subject to PDF, and the above content is for reference

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