Allicdata Part #: | NTQD6866R2OS-ND |
Manufacturer Part#: |
NTQD6866R2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 20V 4.7A 8TSSOP |
More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 4.7A 940mW Sur... |
DataSheet: | NTQD6866R2 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 4.7A |
Rds On (Max) @ Id, Vgs: | 32 mOhm @ 6.9A, 4.5V |
Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 1400pF @ 16V |
Power - Max: | 940mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: | 8-TSSOP |
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The NTQD6866R2 is a power metal-oxide-semiconductor field-effect transistor (MOSFET) array. It is an advanced technology design which has integrated two high and low side MOSFETs, charge pump circuitry, and protection drivers in a single package. The array features a high current density, low total gate charge, and excellent dV/dt immunity. It is renowned for its low thermal loss, and for its integrated highly inductive load current sensing capabilities. The NTQD6866R2 is suitable for a number applications, including AC/DC power supplies, DC/DC converters, and other power exchanges.
The NTQD6866R2 is composed of two independent Darlington MOSFETs, each providing very low on-resistance. The on-resistance of the low side MOSFET is typically 0.55ohm, while the high side MOSFET is typically 0.115ohm. This allows it to work well with a wide range of sources and loads. The interchangeable charge pump and protection driver provide better reliability in case of unexpected high dV/dt and short-circuit events. The integrated current sensing capability ensures highly inductive loads can be driven with accuracy.
The integrated protection mechanisms of the NTQD6866R2 make it the ideal choice for high power switching applications. The on-chip protection features include over-current protection, over-voltage protection, and off-board thermal protection. The protection features provide both current and temperature protection to the device, ensuring its reliability and longevity in harsh operating environments. The on-chip thermal cutoff circuit also helps protect the device from thermal runaway.
In terms of power control, the NTQD6866R2 uses a standard N-channel MOSFET gate driver to achieve accurate switching and provide fast turn-on and turn-off times. This makes it possible to efficiently switch, even at high frequencies and high temperature operating conditions. The built-in gate-rise and gate-fall resistors also help reduce total power dissipation, thereby maximizing efficiency.
The NTQD6866R2 is suitable for many applications, including DC/DC converters, AC/DC power supplies, and other power exchanges. Its wide range of features, low power consumption, and high efficiency make it the ideal choice for high-power switching applications. The NTQD6866R2 offers excellent thermal performance, power efficiency and reliability, making it an ideal solution for many demanding applications.
The specific data is subject to PDF, and the above content is for reference
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