Allicdata Part #: | NTQD6968NR2-ND |
Manufacturer Part#: |
NTQD6968NR2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 20V 6.2A 8TSSOP |
More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 6.2A 1.39W Sur... |
DataSheet: | NTQD6968NR2 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 6.2A |
Rds On (Max) @ Id, Vgs: | 22 mOhm @ 7A, 4.5V |
Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 630pF @ 16V |
Power - Max: | 1.39W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: | 8-TSSOP |
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NTQD6968NR2 is an advanced array type of field-effect transistor (Arrays FETs). It is the latest in a range of devices which uses an array of both vertical and lateral MOSFETs that are able to operate in both low voltage and high voltage conditions. The NTQD6968NR2 is a fully integrated power device integrated with a full temperature control system, active current sensing and complete isolation of the internal components from the outside environment.
An array FET provides the convenience of multiple FETs in a single package, with common gate and source connections. This simplifies the design layout and simplifies system integration while improving reliability. Array FETs also provide superior heat dissipation and improved power density when compared to other FETs.
The NTQD6968NR2 includes a wide variety of features which make it applicable to many different application fields. It has an operating voltage of up to 38V, an operating temperature range of up to 125°C and a maximum current of 25A guaranteed. The device also features a fast dynamic response time of 250 ns and a wide variety of control features, including maximum voltage protection, under-voltage and over current protections, a low-side current sense circuit and a high-side current sense circuit.
The basic principle of operation for the NTQD6968NR2 is the same as for any other FET. A voltage is applied between the gate and the source and when the voltage applied to the gate increases, current flows from the source to the drain. As with any other array FET, the NTQD6968NR2 also has an on-off switch which can be used to control the current. The high-side switch can be used to control the device on, while the low-side switch is used to control the device off.
The NTQD6968NR2 can be used in a variety of application fields, including automotive and industrial control circuits, as well as in mobile communications systems. It can also be used in power supplies, motor controls and in lighting applications. The NTQD6968NR2 has been designed to operate in all low voltage and high voltage conditions and is ideal for applications requiring high-temperature operation.
Overall, the NTQD6968NR2 is a great choice for applications that require a reliable power solution for low and high voltage operations. It has an extensive range of features and its improved power efficiency, low operating voltage, fast dynamic response time, maximum voltage protection and wide array of control features make it suitable for a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
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