NTQD6968N

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The NTQD6968N array is an example of a vertical double-diffused metal-oxide semiconductor field-effect transistor (DMOSFET). This device is designed to work as a high power switch in high power applications. It utilizes a vertical DMOSFET (VDFET) process technology which combines the two distinct MOSFETs. This combination provides superior noise and on-resistance performance.

The NTQD6968N array is suitable for high input voltage applications, such as those found in automotive, energy, and aerospace systems. The device can handle high power in a very small package due to its low on-resistance and drain-source parasitic capacitance. It also features a low gate-to-source capacitance, making it suitable for high speed switching applications.

The working principle of the NTQD6968N array is that it functions as an array of vertical DMOSFET cells, connected in parallel with the gate terminals connected to each other. When a gate voltage is applied, the DMOSFET will be turned on and off, depending on the gate voltage. The gate voltage controls the current flow through the device; thus, controlling the device’s output voltage. In high power applications, the NTQD6968N array can be used to switch between two or more power levels when the gate voltage is increased or decreased.

The NTQD6968N array is a great choice for high power applications due to its low on-resistance and high drain-source capacitance. It is designed for high input voltage applications, and its low gate-to-source capacitance makes it suitable for high speed switching. Additionally, its vertical DMOSFET process allows for superior noise and on-resistance performance.

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