NTR3162PT1G

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Introduction

NTR3162PT1G is a highly reliable N-channel enhancement mode MOSFET, which is designed to reduce switching loss and voltage drop ensuring high efficiency while MOSFET simultaneously operates with high current and low gate drive. This MOSFET has low optimal resistance and is suitable for applications requiring low RDS(on). It has a drain current of 158A and drain-source voltage up to 10V.

Applications

NTR3162PT1G is widely used for low-side switching, for motor-control and digital power applications with low drain-source voltage and current operation. This MOSFET is also suitable for various switching applications from low side to high side. It is used for applications like FET audio amplifiers, switching power supplies, pulse transformers, digit-analog converters, relay control and low-side switches, etc.

Additionally, this MOSFET can be used in multiple fields such as telecoms, automotive and home appliances, etc. Because of its wide operating temperature range, this MOSFET can be used in various high-temperature environments such as motor controllers, server power supplies, and power converters.

Design and Working Principle

NTR3162PT1G MOSFET is designed based on the most advanced silicon on insulator (SOI) technology with the goal of reducing switching loss, gate charge, and voltage drop. This ensures that the MOSFET works more reliably with high current and low gate drive. It is fabricated by etching a single dielectric layer in between the source, drain and channel. This gives the MOSFET a high gate tolerance as well reduction in electrical noise.

When power is supplied to this MOSFET, an electric field is generated between the gate and drain. This field attracts mobile electrons (ie, majority carriers) from the source towards the drain to make the channel conductive, thus allowing a high current to pass through the MOSFET. The amount of power or current that this MOSFET can handle is limited by its voltage breakdown of 10V and a drain current of 158A. This MOSFET can be used to switch high power and control circuits from low voltage and current to high voltage and current.

Conclusion

In summary, NTR3162PT1G is a highly reliable N-channel enhancement mode MOSFET that is suitable for low-side switching, motor-control and digital power applications with low drain-source voltage and current. It has low optimal resistance and is suitable for applications requiring low RDS(on), and can be used in multiple fields such as telecoms, automotive and home appliances. Additionally, this MOSFET is designed based on the most advanced silicon on insulator technology and works on the principle of creating an electric field between the gate and drain, which attracts electrons from the source towards the drain.

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