NTRV4101PT1G Discrete Semiconductor Products |
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| Allicdata Part #: | NTRV4101PT1GOSTR-ND |
| Manufacturer Part#: |
NTRV4101PT1G |
| Price: | $ 0.13 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET P-CH 20V 1.8A SOT-23-3 |
| More Detail: | P-Channel 20V 1.8A (Ta) 420mW (Ta) Surface Mount S... |
| DataSheet: |  NTRV4101PT1G Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.11118 |
| Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SOT-23-3 (TO-236) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 420mW (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 675pF @ 10V |
| Vgs (Max): | ±8V |
| Gate Charge (Qg) (Max) @ Vgs: | 8.5nC @ 4.5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 85 mOhm @ 1.6A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 1.8A (Ta) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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NTRV4101PT1G is a Single N-channel enhancement mode MOSFET is a kind of Insulated Field Effect Transistor, or FET, which is widely used in various application fields and circuits. It is often found in radio frequency applications, an area where it finds wide acceptance for its reliable performance and high current switching capabilities.
The NTRV4101PT1G transistor is an N-channel MOSFET with a virtually zero threshold voltage, meaning it can be turned on or off with minimal or no voltage. It offers high performance, low on voltage and low on-resistance, ideal for high-frequency applications. The device has a maximum drain current of 8A and gate-source voltage of 40V, making it suitable for a wide range of applications. Furthermore, it can switch at high speed and low input capacitance, making it an excellent choice for frequency-sensitive circuits.
The working principle of the NTRV4101PT1G transistor is fairly simple to understand. It is used in an amplification device, where a small change in the gate voltage can control a larger change in the drain current. In N-channel MOSFETs, the gate current is conducted by the electrons, which means the gate-source voltage must be negative for the transistor to turn on. When negative gate voltage is applied, the electron carriers are attracted to the gate, increasing charge density at the entrance of the MOSFET, which then allows current from the source to flow to the drain. When the gate-source voltage is near zero or positive, the charges repel each other, leaving no current to pass from source to drain, thus turning the transistor off.
The NTRV4101PT1G MOSFET can be used in a range of different application fields, including power switching, modulator/demodulator, RF emitter and amplifier, FET mixer, thermoelectric controllers, motor control, and any others that require efficient switching of high current. Their exceptionally small size and low loss of power makes them ideal for many applications where space and power are considerations.
The NTRV4101PT1G MOSFET is a versatile device that can be used in a variety of different applications and is becoming more and more popular thanks to its impressive capabilities and reliability. The device\'s virtually zero threshold voltage means it can be effectively used for frequency-sensitive circuits, its low on-resistance and high-current capabilities make it a great choice for power sources, and its small size make it an excellent choice for applications where space is a constraint.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
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| NTRV4101PT1G | ON Semicondu... | 0.13 $ | 1000 | MOSFET P-CH 20V 1.8A SOT-... |
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