NTZS3151PT5G Allicdata Electronics
Allicdata Part #:

NTZS3151PT5G-ND

Manufacturer Part#:

NTZS3151PT5G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 20V 0.86A SOT-563
More Detail: P-Channel 20V 860mA (Ta) 170mW (Ta) Surface Mount ...
DataSheet: NTZS3151PT5G datasheetNTZS3151PT5G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 170mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 16V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 150 mOhm @ 950mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 860mA (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The NTZS3151PT5G is a single N-channel Zener-protected low resistance (RDSON) SON-format MOSFET which utilizes the latest generation of high-voltage super-junction MOSFET technology. It allows power designers to easily achieve incredibly low-on state resistance, while providing an excellent level of protection.

As compared to traditional MOSFETs, this device offers unmatched performance in both high-current and high-voltage applications. By utilizing P-channel Zener-protection, the device is able to handle higher input voltages and higher drain currents than conventional MOSFETs and is more resistant to input voltage surges, making it ideal for power electronics and industrial motor control applications.

In terms of its operating principle, the NTZS3151PT5G operates according to a conventional P-Channel MOSFET. The gate is the control element and is connected to the source voltage. When a voltage is applied to the gate, the drain current (ID) increases exponentially, allowing the device to provide higher current to the load. Due to the high current gain, the device can be used in applications where the load needs to be powered by high currents.

In terms of its applications, the NTZS3151PT5G is best suited for use in high current and high voltage applications, such as motor control, power conversion, power rectification, automotive, and other power applications. The device provides higher efficiency and is less sensitive to the gate voltage than traditional MOSFETs due to its Zener-protection feature. Furthermore, the Zener-protected MOSFETs can withstand higher temperature environments than conventional MOSFETs due to their superior thermal performance. This makes them an ideal choice for high-power applications that require robust performance.

In addition, the device is also suitable for applications that require low conduction losses and high switching speed. Due to its low input voltage capabilities, the device can easily achieve high-speed switching—in the kHz range—without sacrificing power efficiency. This makes it ideal for use in high speed applications, such as power factor correction (PFC) and DC-DC converters.

Finally, the NTZS3151PT5G is also well suited for high-voltage applications and features excellent Zener-protection for both the gate and drain terminals. This allows the device to remain stable in high-voltage applications, as well as providing improved heat dissipation, thus allowing it to operate in high-temperature environments.

In conclusion, the NTZS3151PT5G is an excelent choice for a wide range of applications, especially those that require high current, high voltage, and high switching speed. Due to its excellent protection feature, the device is stable and reliable, making it a great choice for many power electronic applications. The device also provides excellent thermal performance and a low RDSON value.

The specific data is subject to PDF, and the above content is for reference

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