NVB25P06T4G Discrete Semiconductor Products |
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| Allicdata Part #: | NVB25P06T4GOSTR-ND |
| Manufacturer Part#: |
NVB25P06T4G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET P-CH 60V 27.5A D2PAK |
| More Detail: | P-Channel 60V 27.5A (Ta) 120W (Tj) Surface Mount D... |
| DataSheet: |  NVB25P06T4G Datasheet/PDF |
| Quantity: | 1000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 60V |
| Current - Continuous Drain (Id) @ 25°C: | 27.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 82 mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 10V |
| Vgs (Max): | ±15V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1680pF @ 25V |
| FET Feature: | -- |
| Power Dissipation (Max): | 120W (Tj) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | D2PAK |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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The NVB25P06T4G is a discrete MOSFET type transistor, designed to switch between high- and low-voltage power applications. The device has a maximum power rating of 25 volts and is capable of switching up to 8 amps. It is also available with either built-in gate protection or isolated gate protection.
The device is a N-Channel Enhancement Mode MOSFET, meaning that it has a low on-state resistance, reduces energy consumption and provides fast switching performance. It has a very fast turn-on and turn-off time, allowing for use in circuits where high-frequency switching is necessary. The device has a low input capacitance, allowing for high-speed signal processing applications.
The main application field of the NVB25P06T4G is in power applications, such as solar energy storage and automotive power management systems. It is also suitable for use in high-frequency circuit designs, such as RFID tags, wireless signal transmission, and wirelessly powered LED lighting systems. The device is rated for a maximum drain-source voltage of 25 V and a maximum drain current of 8 A.
The working principle of the NVB25P06T4G is based on the MOSFET. MOSFET stands for Metal-Oxide-Semiconductor Field Effect Transistor, which is a type of field effect transistor (FET) that utilizes a gate electrode to control the flow of current through the device. The gate electrode is an insulated control line that can be used to change the device from an open circuit (off) to a closed circuit (on). When the gate voltage is low, the device is off and no current flows. When the gate voltage is high, the device is on and current can flow through the channel.
The MOSFET is used in many different applications, such as digital and analog switching, low-noise amplifier circuits, logic gates and power switches. The device has the advantage of high-speed switching performance, low power consumption and excellent thermal and electrical characteristics. The device is also resistant to electrical noise, making it suitable for use in noisy environments.
The NVB25P06T4G is a useful tool for high power applications that require fast switching and low power usage. Its unique combination of features makes it an excellent choice for applications such as automotive power management, solar energy storage and wireless signal transmission.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
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| NVB25P06T4G | ON Semicondu... | -- | 1000 | MOSFET P-CH 60V 27.5A D2P... |
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