NVC3S5A51PLZT1G Discrete Semiconductor Products |
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Allicdata Part #: | NVC3S5A51PLZT1GOSTR-ND |
Manufacturer Part#: |
NVC3S5A51PLZT1G |
Price: | $ 0.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CHANNEL 60V 1.8A 3-CPH |
More Detail: | P-Channel 60V 1.8A (Ta) 1.2W (Ta) Surface Mount 3-... |
DataSheet: | NVC3S5A51PLZT1G Datasheet/PDF |
Quantity: | 12000 |
3000 +: | $ 0.16073 |
Vgs(th) (Max) @ Id: | 2.6V @ 1mA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | 3-CPH |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1.2W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 262pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 6nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 250 mOhm @ 1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.8A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The NVC3S5A51PLZT1G is a single N-channel enhancement mode MOSFET. It is designed to be utilized in a wide range of applications and is offered in a standard SOT-25 package. The NVC3S5A51PLZT1G is ideal for switching, amplifier and rectification duties, sensing applications, digital control, power and signal control and other high speed power control circuits.This device is a Metal-Oxide Semiconductor Field Effect Transistor (MOSFET). It is a type of transistor which includes two terminals, the source, and the drain. An applied electric field through a gate electrode modulates the conductivity of the device by controlling the movement of holes and/or electrons through the channel region of the device. The gate electrode is separated from the channel region by an insulating layer of oxide. This means that the gate can be used to control the flow of current between the source and the drain without directly contacting them. In other words, the gate is able to turn the flow of current on and off. The gate electrode is usually referred to as the gate terminal and is identified in diagrams by the abbreviation "G".The NVC3S5A51PLZT1G utilizes an N-channel enhancement mode design. This means that the device is normally off and requires a positive voltage on the gate terminal in order to turn on. Enhancement mode devices are beneficial for power control and digital switching applications as they only require a low power signal to control the flow of current from the source to the drain of the device.The drain and source terminals of the NVC3S5A51PLZT1G are responsible for providing current flow. The source terminal is identified in diagrams by the abbreviation "S" and the drain terminal is identified by the abbreviation "D". When a positive voltage is applied to the gate terminal, a conductive channel is created between the source and the drain. This allows current to flow from the source to the drain and is referred to as a "conductive channel" mode or "on" mode.When the gate voltage is removed, the channel is turned off or "off" mode. This is referred to as an "open" mode. This open mode is beneficial for power control applications such as digital switching, as it allows for very precise control of the current flow.The NVC3S5A51PLZT1G is offered in a standard SOT-25 package with a drain current rating of 500mA. Additionally, the maximum drain-source voltage ratings is 25V, the maximum gate-source voltage is 5.5V and the maximum power dissipation available is 0.5W.Overall, the NVC3S5A51PLZT1G is an ideal solution for a variety of applications, including digital switching, power control, sensing, amplifier and rectifier circuits, as well as other high speed power control circuits. It is optimized for use in a wide range of operating temperature ranges and is available in a standard SOT-25 package. Thanks to its N-channel enhancement mode design, it provides superior on-off performance, allowing for lower loss and higher efficiency.
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