NVC6S5A354PLZT1G Discrete Semiconductor Products |
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| Allicdata Part #: | NVC6S5A354PLZT1GOSTR-ND |
| Manufacturer Part#: |
NVC6S5A354PLZT1G |
| Price: | $ 0.18 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET P-CHANNEL 60V 4A 6-CPH |
| More Detail: | P-Channel 60V 4A (Ta) 1.9W (Ta) Surface Mount 6-CP... |
| DataSheet: |  NVC6S5A354PLZT1G Datasheet/PDF |
| Quantity: | 3000 |
| 3000 +: | $ 0.16564 |
| Vgs(th) (Max) @ Id: | 2.6V @ 1mA |
| Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package: | 6-CPH |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 1.9W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 600pF @ 20V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 100 mOhm @ 2A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 4A (Ta) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The NVC6S5A354PLZT1G is a single MOSFET (metal–oxide–semiconductor field-effect transistor) device. This type of transistor is constructed from three terminals, namely the source, gate, and drain. The device is mainly used in a wide variety of applications due to its robustness, high-speed switching, low power consumption and massive current carrying capability.
The NVC6S5A354PLZT1G is an enhancement mode device. This type of MOSFET operates with a positive voltage applied to the gate terminal. This causes a majority of carriers to be attracted to the gate and form a conductive region. This allows current to flow between the source and drain when the gate voltage is high enough. On the other hand, when the voltage applied to the gate is low, the conductive region is inhibited, thus inhibiting any current flow.
The device has its main application in power converters, power supplies, and power amplifiers, due to its ultra-low on-state resistance and high peak-pulse current capability. It utilizes vertical structure technology and also features an ESD protection structure. This helps to reduce the stress of the chip and develop better performance. The maximum drain current is 11.6A and the maximum allowed drain source voltage is 30V.
Additionally, this device is integrated with a low-voltage level shifter for enhanced functions. This means that a standard voltage level can still be used even when the input voltage is low. The current drive and gate threshold voltage is 8V, which allows for a low-power operation. The package surface also has gold plating that enables it to dissipate heat effectively by providing better thermal dissipation and adhesion.
In conclusion, the NVC6S5A354PLZT1G is a single MOSFET device that enhances the performance of power converters, power supplies, and power amplifiers. It has ultra-low on-state resistance and high peak-pulse current capability. It also has a low operation voltage level, integrated low-voltage level shifters, and gold plating on its package surface. This helps to improve its heat dissipation and adhesion. The unique features of the device make it ideal for a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| NVC6S5A354PLZT1G | ON Semicondu... | 0.18 $ | 3000 | MOSFET P-CHANNEL 60V 4A 6... |
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