NVE4153NT1G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

NVE4153NT1G is a single field-effect transistor (FET) with an ultra-low on-resistance, which is ideal for a variety of power supply isolation, power on/off switching, and even RF switching applications. This product is an enhancement-mode, N-channel MOSFET that is created by NVE Corporation and has a voltage rating of 72 V. It has an RDS (on) of 8 mΩ and a maximum current rating of 7.2 A. It has a low gate charge of 4.55 nC and a low input capacitance of 7.2 pF. It is a surface mount device with an average gate charge of 4.55 nC.

The NVE4153NT1G is a versatile power switching device that is well-suited for a wide range of application fields including computing, communication, consumer, automotive, industrial and military. Because of its features, it is commonly used for power-related applications such as DC-to-DC converters, power distribution, OR Gate circuits, LED drivers, OR gate circuits, low-side switches and level shifters. It is also commonly used in integrated circuits and power supplies, which require an extremely low on-resistance.

The working principle of the NVE4153NT1G involves passing current through the P-Channel FET when it is in its on state. This is done by applying a positive voltage to the gate terminal, which will attract electrons from the source region to the drain region. The electrons are then pushed from the drain terminal to the source terminal when voltage is applied to the drain terminal. When the voltage is removed from the gate terminal, the electrons are no longer attracted from the source to the drain. This creates what is commonly called the “off-state” for the FET.

In order to make sure the NVE4153NT1G is correctly set in its “on-state”, the voltage at the gate terminal must be higher than the voltage at the drain terminal. This is referred to as “forward biasing” the gate-drain junction. When the gate voltage is higher than the voltage at the drain terminal, it is said to be “reverse biasing” the gate-drain junction, which will turn off the FET. It is important to note that the NVE4153NT1G is not a voltage controlled device – the gate voltage must exceed the drain voltage in order to turn it on.

Since the NVE4153NT1G is an enhancement-mode FET, it does not require an external gate current source to operate. This means that it will draw no current from the source unless the gate voltage is applied. When the gate voltage is applied, the device will begin to conduct current from the drain to the source. This type of FET is commonly used for high-speed switching applications as it is able to switch quickly without the need for an additional gate drive circuit.

The NVE4153NT1G is a versatile and reliable single FET that can be used for a range of power switching applications. Its combination of low on-resistance, high-current rating and low gate and input capacitance make it an ideal choice for a variety of power supply isolation, power on/off switching, and even RF switching applications. This product is available in a standard 1 mm x 1 mm, 6 Lead SOT-23 package and is RoHS Compliant.

The specific data is subject to PDF, and the above content is for reference