NVF5P03T3G Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	SOT-223
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.56W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	950pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	38nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	100 mOhm @ 5.2A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	3.7A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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NVF5P03T3G is a surface-mounted insulated-gate field-effect transistor (IGFET). Developed and manufactured by NXP Semiconductors, it is commonly used in switch mode power supplies (SMPS), DC-to-DC converters, computer servers and server peripherals.The NVF5P03T3G is a low-on-resistance, 60V logic level N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It has a drain-source voltage rating of -60V and a drain-source current rating of -27A. The on-resistance is typically 4.25Ω and the total gate charge is 4.2nC. The junction temperature (Tj) rating for the device is 150°C and the maximum operating temperature is 105°C. The NVF5P03T3G employs an insulated-gate structure to achieve high-gain performance and low-input capacitance. Additionally, it has a low-duty cycle variation, allowing it to be used in a wide range of applications.As with any field-effect transistor (FET), the NVF5P03T3G works by applying a voltage to the gate to create an electric field. This electric field causes a depletion zone in the channel, reducing the current between the source and drain. By controlling the voltage applied to the gate, the current through the channel can be either increased or decreased.The NVF5P03T3G is especially well-suited for applications that require high efficiency, such as mobile devices, computers, digital audio amplifiers, and other high-power switching applications. These applications typically require dynamic control of the channel current and fast switching speeds, both of which the NVF5P03T3G provides.The NVF5P03T3G is also popular for use in DC-DC converters, where it can be used to control the power flow from the input voltage to the output voltage. The device can be used as an on/off switch, turn-off switch, or a variable voltage regulator. It can be also used as a switch in high-speed switching circuits.In conclusion, the NVF5P03T3G is a low-on-resistance, 60V logic level N-channel MOSFET. It has a wide range of applications, including switch mode power supplies, DC-to-DC converters, computer servers and server peripherals, as well as mobile devices and digital audio amplifiers. Through its insulated-gate structure and low gate-charge, the NVF5P03T3G offers high-gain performance and low-input capacitance, making it a popular choice for high-power switching applications.

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