NVF6P02T3G Allicdata Electronics
Allicdata Part #:

NVF6P02T3GOSTR-ND

Manufacturer Part#:

NVF6P02T3G

Price: $ 0.30
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 20V 10A SOT-223
More Detail: P-Channel 20V 10A (Ta) 8.3W (Ta) Surface Mount SOT...
DataSheet: NVF6P02T3G datasheetNVF6P02T3G Datasheet/PDF
Quantity: 1000
4000 +: $ 0.27893
Stock 1000Can Ship Immediately
$ 0.3
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223 (TO-261)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 8.3W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 16V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 50 mOhm @ 6A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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NVF6P02T3G transistors are Field-Effect Transistors (FETs). They are popularly known as Mosfets (metal-oxide-semiconductor FETs), and belong to the family of single-gate FETs. NVF6P02T3G transistors are N-channel enhancement mode devices, which means that their conductivity increases as the voltage applied to their gate terminal rises. This increases their current-handling capabilities, making them useful for controlling high-power applications such as motors and relays.

NVF6P02T3G transistors can be used in a number of different electronic applications. They are often used for switching and power applications, as their superior current handling capabilities make them ideal for controlling high-power devices. They can also be used for analog applications, as their small size and low gatesian allows for high-speed operation. Furthermore, due to their low drain-source breakdown voltage, NVF6P02T3G transistors are excellent candidates for protection circuits.

The working principle of a NVF6P02T3G transistor is based on the behavior of a three-terminal field-effect device. The transistor is composed of a channel between two terminals, the source and the drain. A gate terminal is connected to the channel and a voltage is applied to it. This gate voltage can either increase or decrease the conductivity of the channel. When a positive voltage is applied, the number of electrons in the channel increases, resulting in an increase in current flow, hence “enhancement mode”. When a negative voltage is applied, the number of electrons is reduced and current flow is reduced, hence “depletion mode”.

The source-drain path of a NVF6P02T3G transistor is composed of a lightly doped n-type region between two highly doped p-type regions. The inversion layer increases with the gate voltage, resulting in an increased current flowing between source and drain. Since the threshold voltage for inversion is relatively low for a NVF6P02T3G transistor, their current-handling capabilities are also high, making them well suited for switching applications.

NVF6P02T3G transistors can be used in a variety of different circuits ranging from switching applications to analog applications. Due its wide range of features and benefits, the NVF6P02T3G is well-suited for many different applications. The device is used in a wide range of consumer and industrial electronics, making it an important part of the modern electronics industry.

The specific data is subject to PDF, and the above content is for reference

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