NVR1P02T1G Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.3V @ 250µA
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	400mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	165pF @ 5V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	2.5nC @ 5V
Series:	--
Rds On (Max) @ Id, Vgs:	180 mOhm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	1A (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The NVR1P02T1G is a high-performing field-effect transistor, otherwise known as a FET. Of the various different types of FETs available, NVR1P02T1G is a type of single MOSFET, designed to control the flow of current between two terminals by using a small electrical signal applied between the Gate and one of the other terminals. The NVR1P02T1G is a compact, small-signal MOSFET developed to perform in a wide range of applications. It has a low signal capacitance and an ultra-low gate threshold voltage, making it ideal for signal switching and signal modulation in high-frequency circuits. It can also be used to improve signal-to-noise ratio and to increase signal isolation.The NVR1P02T1G utilizes a unique structural design that allows for high gain and a low on-state resistance. This makes it a superior choice for applications where a fast switching time and reduced power consumption are required. It is also capable of driving high currents, making it well-suited for applications such as motor control and power conversion. The NVR1P02T1G is designed with built-in electrolytic capacitors that reduce switching noise, while its low input capacitance ensures excellent low-bias stability. It also features a wide drain-source breakdown voltage, making it suitable for use in high-voltage circuits. The NVR1P02T1G is robust and reliable, with an extended positive-temperature coefficient that prevents thermal runaway in the event of an overload. It can also operate over a wide temperature range. The device\'s low leakage current also ensures low-noise operation, making it ideal for use in communication lines, audio systems, and other sensitive electronic circuits. The NVR1P02T1G\'s unique properties make it useful in a wide range of applications. It can be used in power factor correction circuits, DC-DC converters, motor control applications, and solar cell generators. The NVR1P02T1G is also suitable for use in various switching circuits, such as line drivers, audio amplifiers, radio receivers, and high-speed data transmission.All these features combine to make NVR1P02T1G an ideal choice for low-noise, high-efficiency applications. The device is easily integrated onto printed circuit boards and is compatible with a variety of mounting methods for increased versatility. In sum, the NVR1P02T1G is a highly functional device that can serve a variety of applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description