NVR4501NT1G Discrete Semiconductor Products

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The NVR4501NT1G is a single sided N-Channel enhancement mode vertical DMOS field effect transistors. It is specifically designed for applications such as Telecommunication, portable communications, and other electronic equipment. NVR4501NT1G is a transistor in a power package featuring a fast response time, low gate charge and high useful current of 1.2 A. NVR4501NT1G is manufactured using a special planar process for a high avalanche breakdown voltage, enabling it to provide the highest level of performance in those applications requiring a high power control.

The NVR4501NT1G is constructed quite similarly to any other N-Channel enhancement mode MOSFET. The NVR4501NT1G consists of a drain, a source and a vertical gate flanked by two layers of vertical silicon. The two layers of silicon act together as a gate to control the current that flows between the drain and the source. The voltage applied to the gate creates an electrical field that adjusts the number of channels through which current can flow between the drain and the source.

The NVR4501NT1G is an ideal device for applications such as audio, video, variable speed motors, and other applications that require a rapid switching of power. It offers fast switching, with a high speed of operation, typically greater than 1kHz. Its high current capability makes it suitable for high power applications, as its maximum drain-to-source voltage is 32.5 V. The on-state resistance of the NVR4501NT1G is relatively low, allowing for high efficiency at low to moderate load currents, making it an ideal device for when power efficiency is desired.

The primary application fields for the NVR4501NT1G include telecommunication equipment, portable communications and other various related electronic devices. This FET can be used to control the speed and direction of a motor in a variety of applications, from robotics and automation to automotive applications. This device can also be used to control the output power of a system. It is highly used today in applications of power management, switching power supplies, and other high-voltage or high-power applications.

The working principle of the NVR4501NT1G is quite simple. When the gate voltage is increased, the current that can flow between the source and drain increases. This is referred to as the \'forward conductivity\' of the FET. As the gate voltage increases, it creates an electric field and the current is able to flow more freely, resulting in increased forward conductivity. When the gate voltage is decreased, the current that can flow between the source and drain decreases. This is referred to as the \'reverse conductivity\' of the FET. As the gate voltage decreases, the electric field is reduced, resulting in decreased reverse conductivity.

The NVR4501NT1G is a versatile device and has been utilized in many applications. With its combination of fast switching and high useful current of 1.2 A, it is an ideal device for applications requiring power control and/or switching. Its ability to control the output power of a system, handle moderate loading currents with high-efficiency, and its high avalanche breakdown voltage make it a preferred choice for telecommunications and other related electronic equipment. Its low on-state resistance also makes it a great choice for applications that require power efficiency.

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