NVTA7002NT1G Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	1.5V @ 100µA
Package / Case:	SC-75, SOT-416
Supplier Device Package:	SC-75
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	300mW (Tj)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	20pF @ 5V
Vgs (Max):	±10V
Series:	--
Rds On (Max) @ Id, Vgs:	7 Ohm @ 154mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	154mA (Tj)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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<p>The NVTA7002NT1G is a Surface Mountable Vertical DMOS FET. It was designed to be used in applications where high efficiency, low noise, and high power density are desired. The NVTA7002NT1G is an advanced FET that has been specifically developed for use in applications such as audio amplifiers, MOSFET drive circuits, and high-power RF applications.</p><p>The NVTA7002NT1G is an N-channel vertical DMOS FET with a 3-pin TO-92 packaging configuration. It has a maximum drain current of 120mA and a drain-source voltage of 200V. It has a maximum gate-source voltage of -10V and a gate-drain voltage of 0V. The FET also has a total gate charge of 40nC and an input capacitance of 160pF.</p><p>The NVTA7002NT1G is suitable for use in applications such as audio amplifiers, DC-DC converters, and low-noise analog circuits. It is also suitable for use in audio power amplifiers (PA) where efficiency is desired. Furthermore, it can also be used in MOSFET drive circuits and high-power RF applications.</p><p>The working principle of the NVTA7002NT1G is relatively simple. When a signal is applied to the Gate, the voltage across the Gate-Source junction causes the FET to turn on. This, in turn, causes a current to flow through the Drain-Source junction. The signal applied to the Gate is then amplified and regulated by the FET.</p> <p>The NVTA7002NT1G has a wide range of applications and benefits. It can be used in audio amplifiers, MOSFET drive circuits, and high-power RF applications, as well as in low-noise analog circuits and DC-DC converters. The FET has a low on-state resistance, which results in high efficiency and low noise. Additionally, the FET has a high input capacitance, which allows for a high input impedance and low distortion.</p><p>In summary, the NVTA7002NT1G is a Surface Mountable Vertical DMOS FET that was developed for applications where efficiency, low noise, and high power density are desired. The FET has a 3-pin TO-92 packaging configuration, a maximum drain current of 120mA, a drain-source voltage of 200V, and a total gate charge of 40nC. The NVTA7002NT1G is suitable for use in audio amplifiers, DC-DC converters, and MOSFET drive circuits. It has a wide range of benefits, such as a low on-state resistance, high input capacitance, high input impedance, and low distortion.</p>

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