NX3020NAKW,115 Discrete Semiconductor Products

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The NX3020NAKW,115 is a type of single field-effect transistor, more commonly known as an MOSFET. MOSFETs are regularly used in electronic circuit designs, such as power amplifiers, power stations, electronic motor controllers, and general-purpose electrical circuits. They are able to regulate and switch current and voltage, making them useful for a variety of applications.

A complete MOSFET consists of a source, a drain, second gate and first gate. The source and drain serve as current terminals, while the gate is used to control the flow of current from source to drain. By applying an electrical signal to the gate, the current between the source and drain can be changed. This is known as the voltage-controlled current source (VCCS) mode, and is the most common application of MOSFETs.

The NX3020NAKW,115 features a single, insulated-gate field-effect transistor with a maximum drain current rating of at least 20A. It has an RDS(ON) of 0.037Ω, a drain-source voltage of 20V and an operating junction temperature of up to 150°C. Its robust design makes it well suited for applications that require reliability, such as in power stations, electric motor controllers, and high power audio amplifiers.

The working principle of an MOSFET is relatively simple. When a gate voltage is applied, the drain-source resistance is reduced, allowing current to flow and thereby turning the device on. When the gate voltage is reduced, the drain-source resistance increases, limiting or completely blocking the current from flowing, and thus turning the device off.

The NX3020NAKW,115 is therefore ideal for controlling current and voltage in applications such as power amplifiers, power stations, electric motor controllers, and other general-purpose electrical circuits. Additionally, its single, insulated-gate field-effect transistor design makes it well suited for applications that require reliability. It also features a robust design, with an RDS(ON) of 0.037Ω, a drain-source voltage of 20V and an operating junction temperature of up to 150°C, making it a great choice for high power audio applications.

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