| Allicdata Part #: | PCFQ8P10W-DIE-ND |
| Manufacturer Part#: |
PCFQ8P10W |
| Price: | $ 4.55 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | MICROSS/On Semiconductor |
| Short Description: | DIE MOSFET P-CH 100V |
| More Detail: | Surface Mount Die |
| DataSheet: |  PCFQ8P10W Datasheet/PDF |
| Quantity: | 1000 |
| 25 +: | $ 4.09500 |
| Series: | -- |
| Packaging: | Tray |
| Part Status: | Active |
| FET Type: | -- |
| Technology: | -- |
| Current - Continuous Drain (Id) @ 25°C: | -- |
| Drive Voltage (Max Rds On, Min Rds On): | -- |
| Rds On (Max) @ Id, Vgs: | -- |
| Vgs(th) (Max) @ Id: | -- |
| Vgs (Max): | -- |
| FET Feature: | -- |
| Power Dissipation (Max): | -- |
| Operating Temperature: | -- |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | Die |
| Package / Case: | Die |
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The PCFQ8P10W is a field-effect transistor (FETs) that is based on a MOSFET technology. It is a part of an integrated circuit that is more commonly known as an “integrated FET.” This device is used in a wide array of electrical applications and is suitable for both low- and high-power applications.
Unlike other types of FETs, the PCFQ8P10W does not require extra current to be driven by the gate voltage. Rather, the current gain of the device is determined by its size and structure. This allows for less power to be required for its operations.
The PCFQ8P10W is designed to be used as an analog switch or a linear amplifier in various electronic devices. Its size, combined with its high level current gain, make it suitable for a variety of applications, such as radio and audio amplifiers, optical receivers, power supplies, and power management systems. The device is also suitable for use in high frequency analog and digital circuits, such as amplifiers, filter circuits, and data converters.
The PCFQ8P10W is designed to be operated under an operating temperature range of -55°C to +125°C. It has a breakdown voltage of 12V, a maximum gate threshold voltage of 1.5V, a maximum RDson of 8Ω, and a gate drive of 10mA.
The PCFQ8P10W is a type of FET, which means that it is a “field-effect transistor.” This type of transistor has no physical control gate like a BJT transistor. Instead, it utilizes an insulating layer between the gate and the source and drain electrodes. The electric effect of this insulator is what causes the current to flow from the gate voltage.
This device can be used in either enhancement mode or depletion mode. In the enhancement mode, the current through the drain-source will flow when the gate voltage is higher than the threshold voltage. In depletion mode, the current will flow when the gate voltage is lower than the threshold voltage.
The PCFQ8P10W is a high-performance field-effect transistor that is ideal for a wide range of applications. Its size and structure make it suitable for high-frequency analog and digital circuits, while its high current gain and low power requirements make it suitable for use in power management systems, power supplies, and optical receivers.
The specific data is subject to PDF, and the above content is for reference
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