PD20010STR-E Discrete Semiconductor Products |
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Allicdata Part #: | 497-10095-2-ND |
Manufacturer Part#: |
PD20010STR-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | TRANS N-CH 40V POWERSO-10RF STR |
More Detail: | RF Mosfet LDMOS 13.6V 150mA 2GHz 11dB 10W PowerSO-... |
DataSheet: | PD20010STR-E Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 2GHz |
Gain: | 11dB |
Voltage - Test: | 13.6V |
Current Rating: | 5A |
Noise Figure: | -- |
Current - Test: | 150mA |
Power - Output: | 10W |
Voltage - Rated: | 40V |
Package / Case: | PowerSO-10RF Exposed Bottom Pad (2 Straight Leads) |
Supplier Device Package: | PowerSO-10RF (Straight Lead) |
Base Part Number: | PD20010 |
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PD20010STR-E is a special type of semiconductor device known as a Field Effect Transistor (FET). They are widely used in amplifying and switching applications, such as amplifying radio-frequency (RF) signals. They are typically composed of a substrate, gate oxide, and one or more metal-oxide-semiconductor layers. In the case of PD20010STR-E, these layers are made of gallium arsenide (GaAs), an especially powerful and efficient semiconductor material.
FETs such as PD20010STR-E operate by passing current through a metal-oxide-semiconductor layer or "channel" that is sandwiched between two electrodes. By varying the amount of current that is passed through the channel, the amount of current that is available to flow between the two electrodes can be regulated. In this way, PD20010STR-E is used to amplify, switch, or modulate a signal.
FETs such as PD20010STR-E are commonly referred to as MOSFETs (Metal-Oxide Semiconductor Field Effect Transistors), and are commonly used in RF applications. In RF circuits, FETs such as PD20010STR-E are used to increase the effectiveness of an amplifier by improving its dynamic range. In addition, FETs are used to adjust the gain of a signal, allowing for greater control over the power of the signal.
FETs such as PD20010STR-E are also extremely versatile and can be used in many different types of circuits. They can be used in a wide variety of digital and analog circuits, such as in digital-to-analog converters, frequency dividers, mixers, switches, and amplifiers. By adjusting the voltage applied to the gate electrode, the characteristics of the FET can be tailored to the particular circuit requirements.
PD20010STR-E is a state-of-the-art FET capable of providing highly reliable performance. Its excellent thermal characteristics and small form factor make it ideal for applications where space is at a premium. In addition, its wide operating temperature range makes it suitable for use in a variety of environments. With its ability to provide high performance and reliable operation, PD20010STR-E is well-suited for a wide range of RF applications.
The specific data is subject to PDF, and the above content is for reference
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