PD20015S-E

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The PD20015S-E application field is a radio frequency (RF) FET device with N-channel enhancement-mode. This device has been designed for use in RF communications, automotive and general-purpose switching and amplifying applications. It can be found in a wide range of applications, including high-End Point-to-Point, Broadcast Satellite services, GPS, and Test and Measurement.

The PD20015S-E is an RF FET that employs a N-channel enhancement-mode architecture with advanced process technology for increased linearity and low noise figure. It has excellent RF performance, high input impedance, low noise figure and low insertion loss. It also benefits from the small die size of N-channel enhancement-mode.

The device maintains its high linear performance by using advanced technology that confers excellent noise and distortion characteristics while minimizing the current consumption. It is also capable of withstanding high power levels and can provide good linearity performance even in low power applications.

In terms of the working principle of the PD20015S-E, the device can be thought of as a switch that can be turned on and off. It works on the principle of allowing current flow through the device when it is turned on, and blocking current flow when it is turned off. This type of device is commonly referred to as an RF switch.

When an RF signal is applied to the gate of the PD20015S-E, it creates a field that either allows or blocks current flow between the drain and source. This is accomplished through the use of an insulated gate and a field-effect transistor. When the gate is turned on, it creates a field that attracts electrons from the source, thus allowing current flow. When the gate is turned off, the field collapses, preventing current flow. By using this type of architecture, the device can provide excellent linear performance over a wide range of frequencies and levels.

The PD20015S-E provides a low insertion loss of approximately 0.3 dB, with an input capacitance of approximately 2.0 pF. The high input impedance and low insertion loss makes this an excellent choice for use in RF applications. Additionally, the device can withstand high power levels, making it well suited for use in high power systems.

In conclusion, the PD20015S-E application field is a radio frequency FET device with N-channel enhancement-mode, designed for use in RF communications, automotive and general-purpose switching and amplifying applications. It has excellent RF performance, high input impedance, low noise figure and low insertion loss. It also works on the principle of allowing current flow through the device when it is turned on, and blocking current flow when it is turned off, providing excellent linear performance over a wide range of frequencies and levels.

The specific data is subject to PDF, and the above content is for reference