PD20015C

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The PD20015 is an N-Channel Enhancement Mode Field Effect Transistor designed especially for use on 37 GHz radar systems operating at power levels up to 3 W. It features an 0.25um gate length for improved switching performance, broadened frequency operation, and a thinner dielectric for higher breakdown levels. In order to keep up with the stringent performance requirements for these systems, the PD20015 is designed with a low noise figure, a peak transconductance of 100 S/mm, and an on-resistance of 8 mohms. It also features a low threshold voltage, which allows for better performance at low power levels.

The PD20015 is best suited for high power applications such as radar systems and other power amplifiers. It is optimized to provide outstanding linearity and high gain in the 2.8 to 37 GHz frequency range. This is done by using a very thin gate oxide, which reduces junction capacitance and increases the transconductance of the device. Additionally, the device has low gate leakage currents and improved switching speeds compared to other field effect transistors.

The basic principle of operation behind the PD20015 is that of a field-effect transistor. In this type of device, a gate voltage is applied to the device, which causes an electric field to appear in a substrate region between the gate electrodes and the drain and source electrodes. If the gate voltage is increased, more charge carriers, usually electrons, are attracted into the substrate region and then diffuse into the drain and source. In this fashion, a voltage applied to the gate changes the current flowing through the device.

The PD20015 not only provides superior performance in the 37 GHz frequency range, but also in other applications requiring high power and linearity. Its features make it ideal for use in wireless communication systems, radar systems, network systems, and industrial applications.

The PD20015 is an ideal choice when it comes to high power applications requiring efficiency and linearity in the 2.8 to 37 GHz frequency range. Its low noise figure, peak transconductance of 100 S/mm, and its on-resistance of 8 mohms make it an excellent choice for applications such as wireless communication systems, radar systems, network systems and industrial applications.

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