PD54008-E

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The PD54008-E is a high quality field effect transistor manufactured by ON Semiconductor. It is a physically small and power efficient FET (field effect transistor) designed for operating in the RF frequency range. It is suitable for a wide range of applications, such as wireless communication, data acquisition, and signal processing.

The semiconductor device is constructed a junction gate field effect transistor. It has a Drain-Source breakdown voltage of 76V and a Gate-Source breakdown voltage of 10V. The FET can provide a Drain-Source current of 7A and a Gate-Source leakage current of -9A. The maximum operating temperature is 125°C, and the total gate charge is 6.0nC. For optimal performance, the PD54008-E should be used with a substrate-referenced signal. The overall size of the device is 6.07mm x 6.07mm.

The primary advantage of this FET is its small size and power efficiency. This makes it suitable for applications where space is at a premium. Its breakdown voltage and current ratings also make it suitable for many types of high speed and high power applications. Furthermore, its low gate charge improves its switching performance, making it an excellent choice for signal processing applications.

The PD54008-E has a wide range of practical applications. It can be used in wireless communication, data acquisition, and signal processing, as well as any other application requiring high speed and power efficiency. It can be used in portable radios and telecom equipment, as well as audio amplifiers, RF receivers, and RF transmitters. Since it is specifically designed for the RF frequency range, it is also useful as an efficient power amplifier for low power RF signals.

In summary, the PD54008-E is a high quality field effect transistor designed for use in the RF frequency range. It has a small size and high power efficiency, making it suitable for applications in which space is at a premium. Due to its high breakdown voltage and current ratings, it can be used in a wide range of applications, such as wireless communication, data acquisition, signal processing, and RF amplification. Further, its low gate charge improves its switching performance, making it an ideal choice for digital signal processing applications.

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