
Allicdata Part #: | 497-8803-2-ND |
Manufacturer Part#: |
PD54008TR-E |
Price: | $ 7.53 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | TRANS RF PWR N-CH POWERSO-10RF |
More Detail: | RF Mosfet LDMOS 7.5V 150mA 500MHz 11.5dB 8W PowerS... |
DataSheet: | ![]() |
Quantity: | 1000 |
600 +: | $ 6.83298 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 500MHz |
Gain: | 11.5dB |
Voltage - Test: | 7.5V |
Current Rating: | 5A |
Noise Figure: | -- |
Current - Test: | 150mA |
Power - Output: | 8W |
Voltage - Rated: | 25V |
Package / Case: | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) |
Supplier Device Package: | PowerSO-10RF (Formed Lead) |
Base Part Number: | PD54008 |
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PD54008TR-E Application Field and Working Principle
The PD54008TR-E is a high-frequency Small-Signal Field-Effect Transistor (S-FET) device manufactured by Powertip Technology. It was designed and developed especially for use in mobile communication systems in a 1.3mm × 1.3mm DFN-6L package.
This S-FET device is composed of a single N-channel junction field-effect transistor (JFET) achieving high gain and low power consumption. It has a drain-source voltage rating of 8.0 V and an on-resistance of 22 Ω at an ambient temperature of 25°C.
Application Field
PD54008TR-E is mainly used in handheld and pocket-sized mobile communications systems, such as the 2G and 3G cellular phones. This device offers excellent RF performance with a low operating temperature and is suited for use in small signal applications.
It also works well in signal processing, signal tracking, signal monitoring, I/O quality testing, analog to digital conversion, signal switching, signal regeneration, signal integration, signal modulation and signal routing. Additionally, it can be used in a broad range of applications from mobile communication systems to office automation and consumer electronics.
Working Principle
The PD54008TR-E is a 2-terminal NPNJFET that has a base-emitter terminal and a collector-base terminal. It functions by allowing a voltage bias to control the conductivity of a semiconductor layer between the two terminals. This allows current to flow through the device.
In order to be able to take advantage of the low-power consumption and increased gain of this device, it must first be biased through the correct resistor and capacitor. The correct amount of bias is determined by a few key variables such as voltage, current and temperature.
The PD54008TR-E also features a wide operating temperature range and stable operation. This device can operate over a temperature range of -50°C to +85°C and offers a wide signal frequency range of up to 250MHz. This device also has a high input impedance and a low leakage current.
The PD54008TR-E is also robust and reliable due to its built-in redundancy and protection circuits. Its design also allows for minimal noise interference, thereby improving signal to noise ratio.
The PD54008TR-E is a crucial device for modern mobile communications. Its unique characteristics make it essential in providing reliable signal quality and performance in various applications such as 2G and 3G cellular phones.
The specific data is subject to PDF, and the above content is for reference
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PD54R-104K | API Delevan ... | 1.11 $ | 1000 | FIXED IND 100UH 520MA 700... |
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