PD54008

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	LDMOS
Frequency:	500MHz
Gain:	11.5dB
Voltage - Test:	7.5V
Current Rating:	5A
Noise Figure:	--
Current - Test:	150mA
Power - Output:	8W
Voltage - Rated:	25V
Package / Case:	PowerSO-10 Exposed Bottom Pad
Supplier Device Package:	10-PowerSO
Base Part Number:	PD54008

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PD54008 is the semiconductor name for a type of field-effect transistor (FET) that is specifically designed for use in radio frequency (RF) applications. This type of FET offers higher levels of performance and lower power consumption as compared to other types of FETs. As a result, it is an excellent choice for RF applications where low noise, high gain and low current requirements are essential.The PD54008 is a high performing, low power type of FET, designed for use in radio frequencies from 0.01 to 100MHz. It is usually classified as an enhancement-mode field-effect transistor (FET), which means that it is able to create an electrical current in the ‘channel’ that runs between two capacitors. When a gate voltage is applied to the two capacitors, the channel is opened allowing a current to flow through the FET. The amount of current that can be produced is determined by the gate voltage and the size of the FET channel. The PD54008 has the unique ability to operate at very low gate voltages while providing high levels of performance, making it an ideal choice for applications which require large amounts of gain in a small package.The working principle of the PD54008 is relatively simple. When an RF signal is applied to the gate of the FET, it produces an electrical current in the FET channel. This electrical current, which passes through the FET channel, is then amplified by the PD54008. The device is usually powered by a DC voltage supply.The PD54008 offers several benefits, including the ability to operate over a wide range of frequencies, high levels of linearity, and the fact that it can produce very high levels of gain. Additionally, the PD54008 is capable of functioning in extreme temperatures, making it suitable for use in a variety of industrial and consumer applications.When used in an RF application, the PD54008 is typically configured with two to three stages. The first stage of the PD54008 will normally comprise a source and drain, which are coupled to the gate of the FET and a source follower buffer that is used to increase the amount of current drawn by the FET’s source. The second stage of the PD54008 is used to amplify the signal, while the third stage is used to drive the load.In conclusion, the PD54008 is a high-performance, low-power type of FET that is specifically designed for use in radio frequency applications. It offers high levels of linearity and gain, as well as being able to operate over a wide range of frequencies. The device is usually powered by a DC voltage and can be configured in several stages in order to meet the requirements of the application.

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