Allicdata Part #: | PH1225AL,115-ND |
Manufacturer Part#: |
PH1225AL,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 25V 100A LFPAK |
More Detail: | N-Channel 25V 100A (Tc) Surface Mount LFPAK56, Po... |
DataSheet: | PH1225AL,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | TrenchMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Rds On (Max) @ Id, Vgs: | 1.2 mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 2.15V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 105nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 6380pF @ 12V |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Supplier Device Package: | LFPAK56, Power-SO8 |
Package / Case: | SOT-1023, 4-LFPAK |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
PH1225AL,115 is a single transistor. It belongs to the family of field effect transistors, or FETs, or more specifically, MOSFETs. It is a popular choice for a wide range of products due to its versatility and ability to satisfy a variety of application requirements. In this article, we explore PH1225AL,115’s application field and working principle.
The conventional application field of PH1225AL,115 lies in the production of electronic components and devices such as amplifiers and oscillators. It is commonly used to control the speed and amount of current flowing through a circuit. It can also be used to act as an analog switch in logic-level circuits, as well as to control the signals and process their flow. PH1225AL,115 is also suitable for low-frequency applications, such as audio and low-frequency signal conditioning circuits. Owing to its high-performance and low-power characteristics, it is often used in the field of energy-efficient circuits and systems.
Now let’s look at the working principle of PH1225AL,115. As a FET, or field-effect transistor, it uses electric fields to control the current flowing through a circuit. The double-gate construction of this MOSFET transistor allows for controlled current flow through two different channels at the same time. The first gate is the source, which controls the current when the base voltage is connected to the field effect transistor. The second gate is the drain, which controls the current when the base voltage is disconnected from the transistor. The output of PH1225AL,115 is a voltage-controlled voltage source, meaning that the output voltage is a function of the voltage on one of its gates.
PH1225AL,115 also uses a resistance-controlled current source, meaning that the current through the transistor is a function of the resistance between the two gates. The compact design of this transistor ensures that it is low in power consumption, while the low resistance between the two gates makes it suitable for low-frequency applications. The voltage across the drain-gate junction is proportional to the voltage of the base, making this transistor highly efficient in its operation. The temperature stability of this transistor is also better than that of many other FETs.
In summary, PH1225AL,115 is a popular choice for many electronic applications due to its versatility and high efficiency. It is suitable for low-frequency applications, such as audio and low-frequency signal conditioning circuits, and is capable of providing excellent current and voltage control. It is also low in power consumption, and its high temperature stability makes it a reliable choice for many electronic circuits. Thus, PH1225AL,115 is an ideal choice for electronic components and devices, and will continue to be a favorite among designers and engineers in the future.
The specific data is subject to PDF, and the above content is for reference
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